Post-Transition Metal Sn-Based Chalcogenide Perovskites: A Promising Lead-Free and Transition Metal Alternative for Stable, High-Performance Photovoltaics

Abstract

Chalcogenide perovskites (CPs) have emerged as promising materials for optoelectronic applications due to their stability, non-toxicity, small bandgaps, high absorption coefficients, and defect tolerance. Although transition metal-based CPs, particularly those incorporating Zr and Hf, have been well-studied, they often exhibit higher bandgaps, lower charge carrier mobility, and reduced efficiency compared to lead-based halide perovskites (HPs). Tin (Sn), a post-transition metal with a similar oxidation state (+4) as Zr and Hf in ABX$_{3}$ structures but with different valence characteristics, remains underexplored in CPs. Given the influence of valence states on material properties, Sn-based CPs are of great interest. This study employs density functional theory (DFT), density functional perturbation theory (DFPT), and many-body perturbation theory (GW and BSE) to investigate a series of distorted Sn-based CPs (ASnX$_{3}$, A = Ca, Sr, Ba; X = S, Se). Our results demonstrate that these perovskites are mechanically stable and exhibit lower direct G$_{0}$W$_{0}$ bandgaps (0.79-1.50 eV) compared to their Zr- and Hf-based counterparts. Analysis of carrier-phonon interactions reveals that the charge-separated polaronic state is less stable than the bound exciton state in these materials. Additionally, polaron-assisted charge carrier mobilities for electrons (21.33-416.02 cm^{2}V^{-1}s^{-1}) and holes (7.02-260.69 cm^{2}V^{-1}s^{-1}) are comparable to or higher than those in lead-based HPs and significantly exceed those of Zr- and Hf-based CPs, owing to reduced carrier-phonon coupling. The estimated spectroscopic limited maximum efficiency (24.2%-31.2%)-confirmed through perovskite solar cell (PSC) simulations using SCAPS-1D software-indicates that these materials are promising candidates for photovoltaic applications.