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arXiv · 2409.12485

Liquid Metal Oxide-assisted Integration of High-k Dielectrics and Metal Contacts for Two-Dimensional Electronics

Dasari Venkatakrishnarao·Abhishek Mishra·Yaoju Tarn·Michel Bosman·Rainer Lee·Sarthak Das·Subhrajit Mukherjee·Teymour Talha-Dean·Yiyu Zhang·Siew Lang Teo·Jian Wei Chai·Fabio Bussolotti·Kuan Eng Johnson Goh·Chit Siong Lau
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Abstract

Two-dimensional van der Waals semiconductors are promising for future nanoelectronics. However, integrating high-k gate dielectrics for device applications is challenging as the inert van der Waals material surfaces hinder uniform dielectric growth. Here, we report a liquid metal oxide-assisted approach to integrate ultrathin, high-k HfO2 dielectric on 2D semiconductors with atomically smooth interfaces. Using this approach, we fabricated 2D WS2 top-gated transistors with subthreshold swings down to 74.5 mV/dec, gate leakage current density below 10-6 A/cm2, and negligible hysteresis. We further demonstrate a one-step van der Waals integration of contacts and dielectrics on graphene. This can offer a scalable approach toward integrating entire prefabricated device stack arrays with 2D materials. Our work provides a scalable solution to address the crucial dielectric engineering challenge for 2D semiconductors, paving the way for high-performance 2D electronics.

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Dasari Venkatakrishnarao, Abhishek Mishra, Yaoju Tarn, Michel Bosman, Rainer Lee, Sarthak Das, Subhrajit Mukherjee, Teymour Talha-Dean, Yiyu Zhang, Siew Lang Teo, Jian Wei Chai, Fabio Bussolotti, Kuan Eng Johnson Goh, Chit Siong Lau. 2024-09-19. Liquid Metal Oxide-assisted Integration of High-k Dielectrics and Metal Contacts for Two-Dimensional Electronics. https://doi.org/10.1021/acsnano.4c08554

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