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arXiv · 2409.10845

Generation of tunable quantum entanglement via nonlinearity symmetry breaking in semiconductor metasurfaces

Jinyong Ma·Tongmiao Fan·Tuomas Haggren·Laura Valencia Molina·Matthew Parry·Saniya Shinde·Jihua Zhang·Rocio Camacho Morales·Frank Setzpfandt·Hark Hoe Tan·Chennupati Jagadish·Dragomir N. Neshev·Andrey A. Sukhorukov
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Abstract

Tunable biphoton quantum entanglement generated from nonlinear processes is highly desirable for cutting-edge quantum technologies, yet its tunability is substantially constrained by the symmetry of material nonlinear tensors. Here, we overcome this constraint by introducing symmetry-breaking in nonlinear polarization to generate optically tunable biphoton entanglement at picosecond speeds. Asymmetric optical responses have made breakthroughs in classical applications like non-reciprocal light transmission. We now experimentally demonstrate the nonlinear asymmetry response for biphoton entanglement using a semiconductor metasurface incorporating [110] InGaP nano-resonators with structural asymmetry. We realize continuous tuning of polarization entanglement from near-unentangled states to a Bell state. This tunability can also extend to produce tailored hyperentanglement. Furthermore, our nanoscale entanglement source features an ultra-high coincidence-to-accidental ratio of $\approx7\times10^4$, outperforming existing semiconductor flat optics by two orders of magnitude. Introducing asymmetric nonlinear response in quantum metasurfaces opens new directions for tailoring on-demand quantum states and beyond.

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Jinyong Ma, Tongmiao Fan, Tuomas Haggren, Laura Valencia Molina, Matthew Parry, Saniya Shinde, Jihua Zhang, Rocio Camacho Morales, Frank Setzpfandt, Hark Hoe Tan, Chennupati Jagadish, Dragomir N. Neshev, Andrey A. Sukhorukov. 2024-09-17. Generation of tunable quantum entanglement via nonlinearity symmetry breaking in semiconductor metasurfaces. https://doi.org/10.1126/sciadv.adu4133

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