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arXiv · 2409.09806

Room-temperature valley-selective emission in Si-MoSe2 heterostructures enabled by high-quality-factor chiroptical cavities

Feng Pan·Xin Li·Amalya C. Johnson·Scott Dhuey·Ashley Saunders·Meng-Xia Hu·Jefferson P. Dixon·Sahil Dagli·Sze-Cheung Lau·Tingting Weng·Chih-Yi Chen·Jun-Hao Zeng·Rajas Apte·Tony F. Heinz·Fang Liu·Zi-Lan Deng·Jennifer A. Dionne
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Abstract

Transition metal dichalcogenides possess valley pseudospin, enabling coupling between photon spin and electron spin for classical and quantum information processing. However, rapid valley-dephasing processes have impeded the development of scalable, high-performance valleytronic devices operating at room temperature. Here we demonstrate that a chiral resonant metasurface can enable room-temperature valley-selective emission in MoSe2 monolayers independent of excitation polarization. This platform provides circular eigen-polarization states with a high quality factor (Q-factor) and strong chiral near-field enhancement. The fabricated Si chiral metasurfaces exhibit chiroptical resonances with Q-factors up to 450 at visible wavelengths. We reveal degrees of circular polarization (DOP) reaching a record high of 0.5 at room temperature. Our measurements show that the high DOP can be attributed to the significantly increased chiroptical local density of states, which enhances valley-specific radiative transition rates by a factor of ~13. Our work could facilitate the development of ultracompact chiral classical and quantum light sources.

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Feng Pan, Xin Li, Amalya C. Johnson, Scott Dhuey, Ashley Saunders, Meng-Xia Hu, Jefferson P. Dixon, Sahil Dagli, Sze-Cheung Lau, Tingting Weng, Chih-Yi Chen, Jun-Hao Zeng, Rajas Apte, Tony F. Heinz, Fang Liu, Zi-Lan Deng, Jennifer A. Dionne. 2024-09-15. Room-temperature valley-selective emission in Si-MoSe2 heterostructures enabled by high-quality-factor chiroptical cavities. https://arxiv.org/abs/2409.09806

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