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Role of Disorder in Third-order Anomalous Hall Effect in Time-reversal Symmetric Systems

Chanchal K. Barman·Arghya Chattopadhyay·Surajit Sarkar·Jian-Xin Zhu·Snehasish Nandy
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Abstract

The third-order anomalous Hall effect (TOAHE) driven by Berry connection polarizability in Dirac materials offers a promising avenue for exploring quantum geometric phenomena. We investigate the role of impurity scattering on TOAHE using the semiclassical Boltzmann framework, via a comparison of the intrinsic contributions (stemming from the Berry connection polarizability) with the extrinsic contributions caused by the disorder. To validate our theoretical findings, we employ a generalized two-dimensional low-energy Dirac model to analytically assess the intrinsic and extrinsic contributions to the TOAHE. Our analysis reveals distinct disorder-mediated effects, including skew-scattering and side-jump contributions. We also elucidate their intriguing dependencies on Fermi surface anisotropy and discuss opportunities for experimental exploration.

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Chanchal K. Barman, Arghya Chattopadhyay, Surajit Sarkar, Jian-Xin Zhu, Snehasish Nandy. 2024-09-12. Role of Disorder in Third-order Anomalous Hall Effect in Time-reversal Symmetric Systems. https://doi.org/10.1103/physrevb.111.235113

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