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arXiv · 2409.04908

Gate-tunable negative differential resistance in multifunctional van der Waals heterostructure

Richa Mitra·Konstantina Iordanidou·Naveen Shetty·Md Anamul Hoque·Anushree Datta·Alexei Kalaboukhov·Julia Wiktor·Sergey Kubatkin·Saroj Prasad Dash·Samuel Lara-Avila
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Abstract

Two-dimensional (2D) semiconductors have emerged as exciting candidates for the development of low-power and multifunctional computing applications, thanks to their qualities such as layer-dependent band gap tunability, high carrier mobility, and excellent electrostatic control. Here, we explore a pair of 2D semiconductors with nearly broken-gap (Type-III-like) band alignment and demonstrate a highly gate-tunable p-MoTe$_2$/n-SnS$_2$ heterojunction with multifunctional behavior. Employing a dual-gated asymmetric device geometry, we unveil its functionality as both a forward and backward rectifying device. Moreover, we observe a highly gate-tunable negative differential resistance (NDR), with a gate-coupling efficiency of $\eta \simeq 0.5$ and a peak-to-valley ratio of $\sim$ 3 down to 150K. By employing density functional theory, we determine that the observed NDR is dominated by valence band-to-valence band tunneling, while additional interband tunneling contributions arise at higher bias. The combination of tunneling driven transport and gate controllability of NDR opens the pathway for realizing gate-tunable 2D material-based neuromorphic and energy-efficient electronics.

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Richa Mitra, Konstantina Iordanidou, Naveen Shetty, Md Anamul Hoque, Anushree Datta, Alexei Kalaboukhov, Julia Wiktor, Sergey Kubatkin, Saroj Prasad Dash, Samuel Lara-Avila. 2024-09-07. Gate-tunable negative differential resistance in multifunctional van der Waals heterostructure. https://doi.org/10.1038/s41598-026-68365-1

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