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arXiv · 2407.21270

Multiple sliding ferroelectricity of rhombohedral-stacked InSe for reconfigurable photovoltaics and imaging applications

Qingrong Liang·Guozhong Zheng·Liu Yang·Shoujun Zheng
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Abstract

Through stacking engineering of two-dimensional (2D) materials, a switchable interface polarization can be generated through interlayer sliding, so called sliding ferroelectricity, which is advantageous over the traditional ferroelectricity due to ultra-thin thickness, high switching speed and low fatigue. However, 2D materials with intrinsic sliding ferroelectricity are still rare, with the exception of rhombohedral-stacked MoS2, which limits sliding ferroelectricity for practical applications such as high-speed storage, photovoltaic, and neuromorphic computing. Here, we reported the observation of sliding ferroelectricity with multiple states in undoped rhombohedral-stacked InSe (γ-InSe) via dual-frequency resonance tracking piezoresponse force microscopy, scanning Kelvin probe microscopy and conductive atomic force microscopy. The tunable bulk photovoltaic effect via the electric field is achieved in the graphene/γ-InSe/graphene tunneling device with a photovoltaic current density of ~15 mA/cm2, which is attributed to the multiple sliding steps in γ-InSe according to our theoretical calculations. The vdw tunneling device also features a high photo responsivity of ~255 A/W and a fast response time for real-time imaging. Our work not only enriches rhombohedral-stacked 2D materials for sliding ferroelectricity, but also sheds light on their potential for tunable photovoltaics and imaging applications.

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Qingrong Liang, Guozhong Zheng, Liu Yang, Shoujun Zheng. 2024-07-31. Multiple sliding ferroelectricity of rhombohedral-stacked InSe for reconfigurable photovoltaics and imaging applications. https://arxiv.org/abs/2407.21270

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