Si/AlN p-n heterojunction interfaced with ultrathin SiO2

Haris Naeem Abbasi; Jie Zhou; Ding Wang; Kai Sun; Ping Wang; Yi Lu; Jiarui Gong; Dong Liu; Yang Liu; Ranveer Singh; Zetian Mi; Zhenqiang Ma

arXiv · 2407.17360

Si/AlN p-n heterojunction interfaced with ultrathin SiO2

Haris Naeem Abbasi·Jie Zhou·Ding Wang·Kai Sun·Ping Wang·Yi Lu·Jiarui Gong·Dong Liu·Yang Liu·Ranveer Singh·Zetian Mi·Zhenqiang Ma

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Abstract

Ultra-wide bandgap (UWBG) materials hold immense potential for high-power RF electronics and deep ultraviolet photonics. Among these, AlGaN emerges as a promising candidate, offering a tunable bandgap from 3.4 eV (GaN) to 6.1 eV (AlN) and remarkable material characteristics. However, achieving efficient p-type doping in high aluminum composition AlGaN remains a formidable challenge. This study presents an alternative approach to address this issue by fabricating a p+ Si/n-AlN/n+ AlGaN heterojunction structure by following the semiconductor grafting technique. Atomic force microscopy (AFM) analysis revealed that the AlN and the nanomembrane surface exhibited a smooth topography with a roughness of 1.96 nm and 0.545 nm, respectively. High-angle annular dark field scanning transmission electron microscopy (HAADF-STEM) confirmed a sharp and well-defined Si/AlN interface, with minimal defects and strong chemical bonding, crucial for efficient carrier transport. X-ray photoelectron spectroscopy (XPS) measurements demonstrated a type-I heterojunction with a valence band offset of 2.73 eV-2.84 eV and a conduction band offset of 2.22 eV -2.11 eV. The pn diode devices exhibited a linear current-voltage (I-V) characteristic, an ideality factor of 1.92, and a rectification ratio of 3.3E4, with a turn-on voltage of indicating effective p-n heterojunction. Temperature-dependent I-V measurements showed stable operation up to 90 C. The heterojunction's high-quality interface and electrical performance showcase its potential for advanced AlGaN-based optoelectronic and electronic devices.

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Haris Naeem Abbasi, Jie Zhou, Ding Wang, Kai Sun, Ping Wang, Yi Lu, Jiarui Gong, Dong Liu, Yang Liu, Ranveer Singh, Zetian Mi, Zhenqiang Ma. 2024-07-24. Si/AlN p-n heterojunction interfaced with ultrathin SiO2. https://arxiv.org/abs/2407.17360

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