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arXiv · 2407.17194

Adsorption-controlled Growth of Homoepitaxial c-plane Sapphire Films

Lena N. Majer·Tolga Acartürk·Peter A. van Aken·Wolfgang Braun·Luca Camuti·Johan Eckl-Haese·Jochen Mannhart·Takeyoshi Onuma·Ksenia S. Rabinovich·Darrell G. Schlom·Sander Smink·Ulrich Starke·Jacob Steele·Patrick Vogt·Hongguang Wang·Felix V. E. Hensling
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Abstract

Sapphire is a technologically highly relevant material, but it poses many challenges to performing epitaxial thin-film deposition. We have identified and applied the conditions for adsorption-controlled homoepitaxial growth of c-plane sapphire. The films thus grown are atomically smooth, have a controlled termination, and are of outstanding crystallinity. Their chemical purity exceeds that of the substrates. The films exhibit exceptional optical properties such as a single-crystal-like bandgap and a low density of F+ centers.

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Lena N. Majer, Tolga Acartürk, Peter A. van Aken, Wolfgang Braun, Luca Camuti, Johan Eckl-Haese, Jochen Mannhart, Takeyoshi Onuma, Ksenia S. Rabinovich, Darrell G. Schlom, Sander Smink, Ulrich Starke, Jacob Steele, Patrick Vogt, Hongguang Wang, Felix V. E. Hensling. 2024-07-24. Adsorption-controlled Growth of Homoepitaxial c-plane Sapphire Films. https://arxiv.org/abs/2407.17194

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