arXiv ScienceSearch

arXiv · 2406.13669

Micro-gap thermo-photo-thermionics: An alternative approach to harvesting thermo-photons and its comparison with thermophotovoltaics

Abstract

This work investigates an alternative to thermophotovoltaics for harvesting thermal and optical energy via photon coupling and thermionic energy conversion. In this device, a heat source is radiatively coupled to a thermionic electron emitter through a nanoscale gap and the electron emitter is coupled to collector through a microscale gap. The analysis using fluctuational electrodynamics and finite time thermodynamics shows that for identical thermal radiator and photon to electron conversion materials, the output power density in the thermionic device can be more than twice that of the thermophotovoltaic device; the thermionic mechanism can also provide more than 30 percent improvement in the energy conversion efficiency compared to the thermophotovoltaic device. Moreover, the maximum power point voltage in the thermionic device is shown to significantly exceed the band gap of conversion material, which determines the theoretical upper limit of the open circuit voltage in a thermophotovoltaic cell. Therefore, the results of this study indicate that thermionic energy harvesting via thermo-photon coupling can be a promising alternative to thermophotovoltaics.

Explore related subjects

Keep this discovery

Explore connections, maps & timelines

BibTeXRIS

Ehsanur Rahman, Alireza Nojeh. 2024-06-19. Micro-gap thermo-photo-thermionics: An alternative approach to harvesting thermo-photons and its comparison with thermophotovoltaics. https://doi.org/10.1016/j.applthermaleng.2023.119993

Cite the original work for its findings. Save a collection to share your selection of sources.

KEEP EXPLORING

Related papers

Measuring vacancy-type defect density in monolayer semiconductors

Two-dimensional (2D) materials have attracted wide-spread interest due to their unique and tunable properties. Their optoelectronic, mechanical, and thermal properties are greatly influenced by crystal defects, which are, in turn, used to control these properties. However, experimental quantification of the density of defects, whether deliberately introduced or inherent, is very difficult in these atomically thin materials. Here we show that helium atom micro-diffraction can be used to measure the defect density in ~15x20um monolayer MoS2, a prototypical 2D semiconductor, quickly and easily compared to standard methods. We present a simple analytic model, the lattice gas equation, that captures the relationship between atomic Bragg diffraction intensity and defect density. The model, combined with ab initio scattering calculations, shows that our technique can immediately be applied to a wide range of 2D materials, independent of sample chemistry or structure. Additionally, wafer-scale characterization is immediately possible.

physics.app-ph

Compact Modeling of Oxide-Semiconductor, 2D Material, Carbon Nanotube, and Cryogenic Transistors with Experiment Verification

This paper presents a unified compact model for emerging transistor technologies, including oxide-semiconductor field-effect transistors (OSFETs), 2D material FETs (2DFETs), carbon nanotube FETs (CNFETs), and cryogenic MOSFETs. A unified charge-density formulation is developed to account for quantum confinement, trap charges, and band-tail states in channel charge calculations. A physics-based transport model is introduced to seamlessly capture carrier transport from the long-channel diffusive regime to the short-channel ballistic limit. Scaling models are incorporated to accurately describe 2D electrostatic effects. Cryogenic operation is modeled through the inclusion of band-tail states and temperature-dependent mobility and threshold voltage. The proposed model is validated against experimental data from the fabricated OSFETs with multiple channel lengths and published measurements of 2DFETs, CNFETs, and cryogenic MOSFETs. Excellent agreement is demonstrated across diverse device architectures, operating conditions, and material systems.

physics.app-ph

Multiplexing approaches to thermoradiative signatureless communications

Using mid-infrared emission from semiconductor devices for covert communications remains a relatively unexplored and yet promising opportunity. The phenomenon of negative luminescence allows for a method of signatureless covert communications where the net infrared emission of an emitting optoelectronic device is balanced to be identical to the ambient thermal background. In this work we provide a practical demonstration of covert data transfer over a thermoradiative channel with data rates up to 100 kbps. In addition, we demonstrate several additional multiplexing techniques that make the proposed thermoradiative communications method more secure against interception by achieving zero instantaneous optical emission, while remaining detectable if a sufficiently spatially or spectrally discerning observation is utilised. Finally, we discuss various application scenarios in which the proposed methods can be used to achieve secure signatureless communications.

physics.app-ph