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arXiv · 2406.12105

Cryogenic Compact mm-Wave Broadband SPST Switch in 22nm FDSOI CMOS for Monolithic Quantum Processors

T. D. Nhut·S. Bonen·G. Cooke·T. Jager·M. Spasaro·D. Sufra·S. P. Voinigescu·D. Zito
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Abstract

This paper reports the experimental characterization at the cryogenic temperature of a compact mm-wave broadband single-pole single-throw (SPST) switch in 22nm FDSOI CMOS technology. The switch consists of two n-MOSFETs with a special device option to reduce the substrate parasitic effects, and a third n-MOSFET to improve isolation. Unlike prior wideband mm-wave switches, it does not require any large passive components, allowing a very compact design, low loss and high isolation performance. The cryogenic measurements at 2 K show an insertion loss lower than 2.3 dB, an isolation better than 25.3 dB, and the return loss better than -11.5 dB, over the entire frequency range from DC to 70 GHz.

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T. D. Nhut, S. Bonen, G. Cooke, T. Jager, M. Spasaro, D. Sufra, S. P. Voinigescu, D. Zito. 2024-06-17. Cryogenic Compact mm-Wave Broadband SPST Switch in 22nm FDSOI CMOS for Monolithic Quantum Processors. https://arxiv.org/abs/2406.12105

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