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arXiv · 2406.09930

Integration of through-sapphire substrate machining with superconducting quantum processors

Narendra Acharya·Robert Armstrong·Yashwanth Balaji·Kevin G Crawford·James C Gates·Paul C Gow·Oscar W Kennedy·Renuka Devi Pothuraju·Kowsar Shahbazi·Connor D Shelly
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Abstract

We demonstrate a sapphire machining process integrated with intermediate-scale quantum processors. The process allows through-substrate electrical connections, necessary for low-frequency mode-mitigation, as well as signal-routing, which are vital as quantum computers scale in qubit number, and thus dimension. High-coherence qubits are required to build fault-tolerant quantum computers and so material choices are an important consideration when developing a qubit technology platform. Sapphire, as a low-loss dielectric substrate, has shown to support high-coherence qubits. In addition, recent advances in material choices such as tantalum and titanium-nitride, both deposited on a sapphire substrate, have demonstrated qubit lifetimes exceeding 0.3 ms. However, the lack of any process equivalent of deep-silicon etching to create through-substrate-vias in sapphire, or to inductively shunt large dies, has limited sapphire to small-scale processors, or necessitates the use of chiplet architecture. Here, we present a sapphire machining process that is compatible with high-coherence qubits. This technique immediately provides a means to scale QPUs with integrated mode-mitigation, and provides a route toward the development of through-sapphire-vias, both of which allow the advantages of sapphire to be leveraged as well as facilitating the use of sapphire-compatible materials for large-scale QPUs.

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Narendra Acharya, Robert Armstrong, Yashwanth Balaji, Kevin G Crawford, James C Gates, Paul C Gow, Oscar W Kennedy, Renuka Devi Pothuraju, Kowsar Shahbazi, Connor D Shelly. 2024-06-14. Integration of through-sapphire substrate machining with superconducting quantum processors. https://arxiv.org/abs/2406.09930

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