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arXiv · 2405.16079

Intrinsic localized excitons in MoSe$_2$/CrSBr heterostructures

Xinyue Huang·Zhigang Song·Yuchen Gao·Pingfan Gu·Kenji Watanabe·Takashi Taniguchi·Shiqi Yang·Zuxin Chen·Yu Ye
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Abstract

We present a comprehensive investigation of optical properties in MoSe$_2$/CrSBr heterostructures, unveiling the presence of localized excitons represented by a new emission feature, X$^*$. We demonstrate through temperature- and power-dependent photoluminescence spectroscopy that X$^*$ originates from excitons confined by intrinsic defects within the CrSBr layer. The valley polarization of X$^*$ and trion peaks displays opposite polarity under a magnetic field, which closely correlates with the magnetic order of CrSBr. This is attributed to spin-dependent charge transfer mechanisms across the heterointerface, supported by density functional theory calculations revealing a type-II band alignment and spin-polarized band structures. Furthermore, the strong in-plane anisotropy of CrSBr induces unique polarization-dependent responses in MoSe$_2$ emissions. Our study highlights the crucial role of defects in shaping excitonic properties. It offers valuable insights into spectral-resolved proximity effects in van der Waals heterostructures between semiconductor and magnet, contributing to advancing spintronic and valleytronic devices.

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Xinyue Huang, Zhigang Song, Yuchen Gao, Pingfan Gu, Kenji Watanabe, Takashi Taniguchi, Shiqi Yang, Zuxin Chen, Yu Ye. 2024-05-25. Intrinsic localized excitons in MoSe$_2$/CrSBr heterostructures. https://arxiv.org/abs/2405.16079

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