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arXiv · 2405.11119

Extended T2 times of shallow implanted NV in chemically mechanically polished diamond

S. Tyler·J. Newland·P. Hepworth·A. Wijesekara·I. R. Gullick·M. L. Markham·M. E. Newton·B. L. Green
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Abstract

Mechanical polishing of diamond is known to be detrimental to the spin lifetime and strain environment of near-surface defects. By utilising a chemical mechanical polishing (CMP) process, we demonstrate that we can achieve 13C-limited spin lifetimes of shallow implanted (<34 nm) NV centres in an industrially scalable process. We compare spin lifetimes (T2) of three diamonds processed with CMP with one processed by inductively-coupled plasma reactive ion etching (ICP-RIE), and observe an increased median T2 of 355 microseconds in the CMP-processed samples for 15NV centres implanted and annealed under identical conditions.

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S. Tyler, J. Newland, P. Hepworth, A. Wijesekara, I. R. Gullick, M. L. Markham, M. E. Newton, B. L. Green. 2024-05-17. Extended T2 times of shallow implanted NV in chemically mechanically polished diamond. https://doi.org/10.1063/5.0244913

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