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arXiv · 2405.11102

CMOS-Compatible, AlScN-Based Integrated Electro-Optic Modulator

Valerie Yoshioka·Jicheng Jin·Haiqi Zhou·Zichen Tang·Roy H. Olsson III·Bo Zhen
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Abstract

Commercial production of integrated photonic devices is limited by scalability of desirable material platforms. We explore a relatively new photonic material, AlScN, for its use in electro-optic modulation. Its CMOS-compatibility could facilitate large-scale production of integrated photonic modulators, and it exhibits an enhanced second-order optical nonlinearity compared to intrinsic AlN, indicating the possibility for efficient modulation. Here, we measure the electro-optic effect in AlScN-based modulators, demonstrating $V_{\pi}L$ around 750 V$\cdot$cm. Since the electro-optic response is smaller than expected, we discuss potential causes for the reduced response and future outlook for AlScN-based photonics.

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Valerie Yoshioka, Jicheng Jin, Haiqi Zhou, Zichen Tang, Roy H. Olsson III, Bo Zhen. 2024-05-17. CMOS-Compatible, AlScN-Based Integrated Electro-Optic Modulator. https://arxiv.org/abs/2405.11102

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