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arXiv · 2405.03527

Dielectric Properties of Disordered A6B2O17 (A = Zr; B = Nb, Ta) Phases

R. Jackson Spurling·Saeed S. I. Almishal·Joseph Casamento·John Hayden·Ryan Spangler·Michael Marakovits·Arafat Hossain·Michael Lanagan·Jon-Paul Maria
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Abstract

We report on the structure and dielectric properties of ternary A6B2O17 (A = Zr; B = Nb, Ta) thin films and ceramics. Thin films are produced via sputter deposition from dense, phase-homogenous bulk ceramic targets, which are synthesized through a reactive sintering process at 1500 {\deg}C. Crystal structure, microstructure, chemistry and dielectric properties are characterized by X-ray diffraction and reflectivity, atomic force microscopy, X-ray photoelectron spectroscopy, and capacitance analysis respectively. We observe relative permittivities approaching 60 and loss tangents < 10^-2 across the 10^3-10^5 Hz frequency range in the Zr6Nb2O17 and Zr6Ta2O17 phases. These observations create an opportunity space for this novel class of disordered oxide electroceramics.

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R. Jackson Spurling, Saeed S. I. Almishal, Joseph Casamento, John Hayden, Ryan Spangler, Michael Marakovits, Arafat Hossain, Michael Lanagan, Jon-Paul Maria. 2024-05-06. Dielectric Properties of Disordered A6B2O17 (A = Zr; B = Nb, Ta) Phases. https://doi.org/10.1111/jace.19966

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