Physical Vapor Deposition of High Mobility P-type Tellurium and its Applications for Gate-tunable van der Waals PN Photodiodes

Tianyi Huang; Sen Lin; Jingyi Zou; Zexiao Wang; Yibai Zhong; Jingwei Li; Ruixuan Wang; Han Wang; Qing Li; Min Xu; Sheng Shen; Xu Zhang

arXiv · 2404.14681

Physical Vapor Deposition of High Mobility P-type Tellurium and its Applications for Gate-tunable van der Waals PN Photodiodes

Tianyi Huang·Sen Lin·Jingyi Zou·Zexiao Wang·Yibai Zhong·Jingwei Li·Ruixuan Wang·Han Wang·Qing Li·Min Xu·Sheng Shen·Xu Zhang

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Abstract

Recently tellurium (Te) has attracted resurgent interests due to its p-type characteristics and outstanding ambient environmental stability. Here we present a substrate engineering based physical vapor deposition method to synthesize high-quality Te nanoflakes and achieved a field-effect hole mobility of 1500 cm2/Vs, which is, to the best of our knowledge, the highest among the existing synthesized van der Waals p-type semiconductors. The high mobility Te enables the fabrication of Te/MoS2 pn diodes with highly gate-tunable electronic and optoelectronic characteristics. The Te/MoS2 heterostructure can be used as a visible range photodetector with a current responsivity up to 630 A/W, which is about one order of magnitude higher than the one achieved using p-type Si-MoS2 PN photodiodes. The photo response of the Te/MoS2 heterojunction also exhibits strong gate tunability due to their ultrathin thickness and unique band structures. The successful synthesis of high mobility Te and the enabled Te/MoS2 photodiodes show promise for the development of highly tunable and ultrathin photodetectors.

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Tianyi Huang, Sen Lin, Jingyi Zou, Zexiao Wang, Yibai Zhong, Jingwei Li, Ruixuan Wang, Han Wang, Qing Li, Min Xu, Sheng Shen, Xu Zhang. 2024-04-23. Physical Vapor Deposition of High Mobility P-type Tellurium and its Applications for Gate-tunable van der Waals PN Photodiodes. https://arxiv.org/abs/2404.14681

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