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Stabilizing perpendicular magnetic anisotropy with strong exchange bias in PtMn/Co by magneto-ionics

Beatrice Bednarz·Maria-Andromachi Syskaki·Rohit Pachat·Leon Prädel·Martin Wortmann·Timo Kuschel·Shimpei Ono·Mathias Kläui·Liza Herrera Diez·Gerhard Jakob
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Abstract

Electric field control of magnetic properties offers a broad and promising toolbox for enabling ultra-low power electronics. A key challenge with high technological relevance is to master the interplay between the magnetic anisotropy of a ferromagnet and the exchange coupling to an adjacent antiferromagnet. Here, we demonstrate that magneto-ionic gating can be used to achieve a very stable out-of-plane (OOP) oriented magnetization with strong exchange bias in samples with as-deposited preferred in-plane (IP) magnetization. We show that the perpendicular interfacial anisotropy can be increased by more than a factor 2 in the stack Ta/Pt/PtMn/Co/HfO2 by applying -2.5 V gate voltage over 3 nm HfO2, causing a reorientation of the magnetization from IP to OOP with a strong OOP exchange bias of more than 50 mT. Comparing two thicknesses of PtMn, we identify a notable trade-off: while thicker PtMn yields a significantly larger exchange bias, it also results in a slower response to ionic liquid gating within the accessible gate voltage window. These results pave the way for post-deposition electrical tailoring of magnetic anisotropy and exchange bias in samples requiring significant exchange bias.

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Beatrice Bednarz, Maria-Andromachi Syskaki, Rohit Pachat, Leon Prädel, Martin Wortmann, Timo Kuschel, Shimpei Ono, Mathias Kläui, Liza Herrera Diez, Gerhard Jakob. 2024-04-12. Stabilizing perpendicular magnetic anisotropy with strong exchange bias in PtMn/Co by magneto-ionics. https://doi.org/10.1063/5.0213731

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