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arXiv · 2401.16502

Towards metal electrode interface scavenging of rare-earth scandates: A Sc2O3 and Gd2O3 study

María Ángela Pampillón·Pedro Carlos Feijoo·Enrique San Andrés·María Toledano-Luque·Álvaro del Prado·Antonio Blázquez·María Luisa Lucía
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Abstract

AmorphousGd2O3 and Sc2O3 thin films were deposited on Si by high-pressure sputtering (HPS). In order to reduce the uncontrolled interfacial SiOx growth, firstly a metallic film of Gd or Sc was sputtered in pure Ar plasma. Subsequently, they were in situ plasma oxidized in an Ar/O2 atmosphere. For post-processing interfacial SiOx thickness reduction, three different top metal electrodes were studied: platinum, aluminum and titanium. For both dielectrics, it was found that Pt did not react with the films, while Al reacted with them forming an aluminate-like interface and, finally, Ti was effective in scavenging the SiO2 interface thickness without severely compromising gate dielectric leakage.

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María Ángela Pampillón, Pedro Carlos Feijoo, Enrique San Andrés, María Toledano-Luque, Álvaro del Prado, Antonio Blázquez, María Luisa Lucía. 2024-01-29. Towards metal electrode interface scavenging of rare-earth scandates: A Sc2O3 and Gd2O3 study. https://doi.org/10.1016/j.mee.2011.03.025

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