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arXiv · 2401.16499

Optimization of gadolinium oxide growth deposited on Si by high pressure sputtering

Pedro Carlos Feijoo·María Ángela Pampillón·Enrique San Andrés
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Abstract

High k gadolinium oxide thin layers were deposited on silicon by high-pressure sputtering (HPS). In order to optimize the properties for microelectronic applications, different deposition conditions were used. Ti (scavenger) and Pt (nonreactive) were e-beam evaporated to fabricate metal-insulator-semiconductor (MIS) devices. According to x-ray diffraction, x-ray photoelectron spectroscopy, and Fourier-transform infrared spectroscopy, policrystaline stoichiometric Gd2O3 films were obtained by HPS. MIS with the dielctric deposited at higher pressures also present lower flatband voltage shifts in the C-V hysteris curves.

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Pedro Carlos Feijoo, María Ángela Pampillón, Enrique San Andrés. 2024-01-29. Optimization of gadolinium oxide growth deposited on Si by high pressure sputtering. https://doi.org/10.1116/1.4766184

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