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arXiv · 2312.03128

AlGaN/AlN heterostructures: an emerging platform for nonlinear integrated photonics

Sinan Gündogdu·Sofia Pazzagli·Tommaso Pregnolato·Tim Kolbe·Sylvia Hagedorn·Markus Weyers·Tim Schröder
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Abstract

In the rapidly evolving area of integrated photonics, there is a growing need for materials that satisfy the particular requirements of increasingly complex and specialized devices and applications. Present photonic material platforms have made significant progress over the past years; however, each platform still faces specific material and performance challenges. We introduce a novel material for integrated photonics: Aluminum Gallium Nitride (AlGaN) on Aluminum Nitride (AlN) as a platform for developing reconfigurable and nonlinear on-chip optical systems. AlGaN combines compatibility with standard semiconductor fabrication technologies, high electro-optic modulation capabilities, and large nonlinear coefficients while providing a broad and low-loss spectral transmission range, making it a viable material for advanced photonic applications. In this work, we design and grow AlGaN/AlN heterostructures and integrate fundamental photonic building blocks into these chips. In particular, we fabricate edge couplers, low-loss waveguides, directional couplers, and tunable high-quality factor ring resonators to enable nonlinear light-matter interaction and quantum functionality. The comprehensive platform we present in this work paves the way for nonlinear photon-pair generation applications, on-chip nonlinear quantum frequency conversion, and fast electro-optic modulation for switching and routing classical and quantum light fields.

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Sinan Gündogdu, Sofia Pazzagli, Tommaso Pregnolato, Tim Kolbe, Sylvia Hagedorn, Markus Weyers, Tim Schröder. 2023-12-05. AlGaN/AlN heterostructures: an emerging platform for nonlinear integrated photonics. https://arxiv.org/abs/2312.03128

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