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arXiv · 2311.17710

Competition of moir\'e network sites to form electronic quantum dots in reconstructed MoX${}_2$/WX${}_2$ heterostructures

Isaac Soltero·Mikhail A. Kaliteevski·James G. McHugh·Vladimir V. Enaldiev·Vladimir I. Fal'ko
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Abstract

Twisted bilayers of two-dimensional semiconductors offer a versatile platform to engineer quantum states for charge carriers using moir\'e superlattice effects. Among the systems of recent interest are twistronic MoSe${}_{2}$/WSe${}_{2}$ and MoS${}_{2}$/WS${}_{2}$ heterostructures, which undergo reconstruction into preferential stacking domains and highly strained domain wall networks, determining the electron/hole localization across moir\'e superlattices. Here, we present a catalogue of options for the formation of self-organized quantum dots and wires in lattice-reconstructed marginally twisted MoSe${}_{2}$/WSe${}_{2}$ and MoS${}_{2}$/WS${}_{2}$ bilayers, fine tuned by the twist angle between the monolayers from perfect alignment to $\theta \sim 1^{\circ}$, and by choosing parallel or anti-parallel orientation of their unit cells. The proposed scenarios of the quantum dots and wires formation are found using multi-scale modelling that takes into account the features of strain textures caused by twirling of domain wall networks.

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Isaac Soltero, Mikhail A. Kaliteevski, James G. McHugh, Vladimir V. Enaldiev, Vladimir I. Fal'ko. 2023-11-29. Competition of moir\'e network sites to form electronic quantum dots in reconstructed MoX${}_2$/WX${}_2$ heterostructures. https://arxiv.org/abs/2311.17710

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