Growth, catalysis and faceting of $\alpha$-Ga$_2$O$_3$ and $\alpha$-(In$_x$Ga$_{1-x}$)$_2$O$_3$ on $m$-plane $\alpha$-Al$_2$O$_3$ by molecular beam epitaxy

Abstract

The growth of $\alpha$-Ga$_2$O$_3$ and $\alpha$-(In$_x$Ga$_{1-x}$)$_2$O$_3$ on $m$-plane $\alpha$-Al$_2$O$_3$(10$\bar{1}$0) by molecular beam epitaxy (MBE) and metal-oxide-catalyzed epitaxy (MOCATAXY) is investigated. By systematically exploring the parameter space accessed by MBE and MOCATAXY, phase-pure $\alpha$-Ga$_2$O$_3$(10$\bar{1}$0) and $\alpha$-(In$_x$Ga$_{1-x}$)$_2$O$_3$(10$\bar{1}$0) thin films are realized. The presence of In on the $\alpha$-Ga$_2$O$_3$ growth surface remarkably expands its growth window far into the metal-rich flux regime and to higher growth temperatures. With increasing O-to-Ga flux ratio ($R_{\text{O}}$), In incorporates into $\alpha$-(In$_x$Ga$_{1-x}$)$_2$O$_3$ up to $x \leq 0.08$. Upon a critical thickness, $\beta$-(In$_x$Ga$_{1-x}$)$_2$O$_3$ nucleates and subsequently heteroepitaxially grows on top of $\alpha$-(In$_x$Ga$_{1-x}$)$_2$O$_3$ facets. Metal-rich MOCATAXY growth conditions, where $\alpha$-Ga$_2$O$_3$ would not conventionally stabilize, lead to single-crystalline $\alpha$-Ga$_2$O$_3$ with negligible In incorporation and improved surface morphology. Higher $T_{\text{G}}$ further results in single-crystalline $\alpha$-Ga$_2$O$_3$ with well-defined terraces and step edges at their surfaces. For $R_{\text{O}} \leq 0.53$, In acts as a surfactant on the $\alpha$-Ga$_2$O$_3$ growth surface by favoring step edges, while for $R_{\text{O}} \geq 0.8$, In incorporates and leads to a-plane $\alpha$-(In$_x$Ga$_{1-x}$)$_2$O$_3$ faceting and the subsequent ($\bar{2}$01) $\beta$-(In$_x$Ga$_{1-x}$)$_2$O$_3$ growth on top. Thin film analysis by STEM reveals highly crystalline $\alpha$-Ga$_2$O$_3$ layers and interfaces. We provide a phase diagram to guide the MBE and MOCATAXY growth of single-crystalline $\alpha$-Ga$_2$O$_3$ on $\alpha$-Al$_2$O$_3$(10$\bar{1}$0).