Uncovering anisotropic effects of electric high-moment dipoles on the tunneling current in $\delta$-layer tunnel junctions

Abstract

The precise positioning of dopants in semiconductors using scanning tunneling microscopes has led to the development of planar dopant-based devices, also known as $\delta$-layers, facilitating the exploration of new concepts in classical and quantum computing. Recently it have been shown that two distinct conductivity regimes (low- and high- bias regimes) exist in $\delta$-layer tunnel junctions due to the presence of quasi-discrete and continuous states in the conduction band of $\delta$-layer systems. Furthermore, discrete charged impurities in the tunnel junction region significantly influence the tunneling rates in $\delta$-layer tunnel junctions. Here we demonstrate that zero-charge impurities, or electrical dipoles, present in the tunnel junction region can also significantly alter the tunneling rate, depending, however, on the specific conductivity regime and orientation and moment of the dipole. In the low-bias regime with high-resistance tunneling mode dipole impurities of nearly all orientations and moments can alter the current, indicating the extreme sensitivity of the tunnel current to the slightest imperfection in the tunnel gap. In the high-bias regime with low-resistivity only dipole defects with high moment and orientated in the direction perpendicular to the electron tunneling direction can significantly affect the current, thus making this conductivity regime significantly less prone to the influence of dipole defects with low-moment or dipoles oriented along the propagation direction.