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arXiv · 2310.04624

Transport Study of Charge Carrier Scattering in Monolayer WSe$_2$

Andrew Y. Joe·Kateryna Pistunova·Kristen Kaasbjerg·Ke Wang·Bumho Kim·Daniel A. Rhodes·Takashi Taniguchi·Kenji Watanabe·James Hone·Tony Low·Luis A. Jauregui·Philip Kim
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Abstract

Employing flux-grown single crystal WSe$_2$, we report charge carrier scattering behaviors measured in $h$-BN encapsulated monolayer field effect transistors. We perform quantum transport measurements across various hole densities and temperatures and observe a non-monotonic change of transport mobility $\mu$ as a function of hole density in the degenerately doped sample. This unusual behavior can be explained by energy dependent scattering amplitude of strong defects calculated using the T-matrix approximation. Utilizing long mean-free path ($>$500 nm), we demonstrate the high quality of our electronic devices by showing quantized conductance steps from an electrostatically-defined quantum point contact. Our results show the potential for creating ultra-high quality quantum optoelectronic devices based on atomically thin semiconductors.

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Andrew Y. Joe, Kateryna Pistunova, Kristen Kaasbjerg, Ke Wang, Bumho Kim, Daniel A. Rhodes, Takashi Taniguchi, Kenji Watanabe, James Hone, Tony Low, Luis A. Jauregui, Philip Kim. 2023-10-06. Transport Study of Charge Carrier Scattering in Monolayer WSe$_2$. https://arxiv.org/abs/2310.04624

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