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arXiv · 2309.16785

Optical and spin coherence of Er$^{3+}$ in epitaxial CeO$_2$ on silicon

Jiefei Zhang·Gregory D. Grant·Ignas Masiulionis·Michael T. Solomon·Jasleen K. Bindra·Jens Niklas·Alan M. Dibos·Oleg G. Poluektov·F. Joseph Heremans·Supratik Guha·David D. Awschalom
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Abstract

Solid-state atomic defects with optical transitions in the telecommunication bands, potentially in a nuclear spin free environment, are important for applications in fiber-based quantum networks. Erbium ions doped in CeO$_2$ offer such a desired combination. Here we report on the optical homogeneous linewidth and electron spin coherence of Er$^{3+}$ ions doped in CeO$_2$ epitaxial film grown on a Si(111) substrate. The long-lived optical transition near 1530 nm in the environmentally-protected 4f shell of Er$^{3+}$ shows a narrow homogeneous linewidth of 440 kHz with an optical coherence time of 0.72 $\mu$s at 3.6 K. The reduced nuclear spin noise in the host allows for Er$^{3+}$ electron spin polarization at 3.6 K, yielding an electron spin coherence of 0.66 $\mu$s (in the isolated ion limit) and a spin relaxation of 2.5 ms. These findings indicate the potential of Er$^{3+}$:CeO$_2$ film as a valuable platform for quantum networks and communication applications.

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Jiefei Zhang, Gregory D. Grant, Ignas Masiulionis, Michael T. Solomon, Jasleen K. Bindra, Jens Niklas, Alan M. Dibos, Oleg G. Poluektov, F. Joseph Heremans, Supratik Guha, David D. Awschalom. 2023-09-28. Optical and spin coherence of Er$^{3+}$ in epitaxial CeO$_2$ on silicon. https://doi.org/10.1038/s41534-024-00903-z

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