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arXiv · 2308.10431

Gapless fluctuations and exceptional points in semiconductor lasers

Abstract

We analyze the spectrum of spatially uniform, single-particle fluctuation modes in the linear electromagnetic response of a semiconductor laser. We show that if the decay rate of the interband polarization, $\gamma_p$, and the relaxation rate of the occupation distribution, $\gamma_f$, are different, a gapless regime exists in which the order parameter $\Delta^{(0)} (k)$ (linear in the coherent photon field amplitude and the interband polarization) is finite but there is no gap in the real part of the single-particle fluctuation spectrum. The laser being a pumped-dissipative system, this regime may be considered a non-equilibrium analog of gapless superconductivity. We analyze the fluctuation spectrum in both the photon laser limit, where the interactions among the charged particles are ignored, and the more general model with interacting particles. In the photon laser model, the order parameter is reduced to a momentum-independent quantity, which we denote by $\Delta$. We find that, immediately above the lasing threshold, the real part of the fluctuation spectrum remains gapless when $0 < | \Delta | < \sqrt{2 / 27} \, | \gamma_f - \gamma_p |$ and becomes gapped when $| \Delta |$ exceeds the upper bound of this range. Viewed as a complex function of $|\Delta|$ and the electron-hole energy, the eigenvalue set displays some interesting exceptional point (EP) structure around the gapless-gapped transition. The transition point is a third-order EP, where three eigenvalues (and eigenvectors) coincide. Switching on the particle interactions in the full model modifies the spectrum of the photon laser model and, in particular, leads to a more elaborate EP structure. However, the overall spectral behavior of the continuous (non-collective) modes of the full model can be understood on the basis of the relevant results of the photon laser model.

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N. H. Kwong, M. Em. Spotnitz, R. Binder. 2023-08-21. Gapless fluctuations and exceptional points in semiconductor lasers. https://arxiv.org/abs/2308.10431

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