arXiv Science⌕ Search
Home/Archive/arXiv

arXiv · 2307.15626

A quantitative phase-field model for void evolution in defect supersaturated environments: a novel introduction of defect reaction asymmetry

Sreekar Rayaprolu·Kyle Starkey·Anter El-Azab
View original source ↗Read source document ↗Export metadata ↓

Abstract

Voids develop in crystalline materials under energetic particle irradiation, as in nuclear reactors. Understanding the underlying mechanisms of void nucleation and growth is of utmost importance as it leads to dimensional instability of the metallic materials. In the past two decades, researchers have adopted the phase-field approach to study the phenomena of void evolution under irradiation. The approach involves modeling the boundary between the void and matrix with a diffused interface. However, none of the existing models are quantitative in nature. This work introduces a thermodynamically consistent, quantitative diffuse interface model based on KKS formalism to describe the void evolution under irradiation. The model concurrently considers both vacancies and self-interstitials in the description of void evolution. Unique to our model is the presence of two mobility parameters in the equation of motion of the phase-field variable. The two mobility parameters relate the driving force for vacancy and self-interstitial interaction to the interface motion, analogous to dislocation motion through climb and glide processes. The asymptotic matching of the phase-field model with the sharp-interface theory fixes the two mobility parameters in terms of the material parameters in the sharp-interface model. The Landau coefficient, which controls the height of the double-well function in the phase field variable, and the gradient coefficient of the phase field variable are fixed based on the interfacial energy and interface width of the boundary. With all the parameters in the model determined in terms of the material parameters, we thus have a new phase field model for void evolution. Simple test cases will show the void evolution under various defect supersaturation to validate our new phase-field model.

Explore related subjects

cond-mat.mtrl-sciphysics.comp-ph

Keep this discovery

BibTeXRIS

Sreekar Rayaprolu, Kyle Starkey, Anter El-Azab. 2023-07-28. A quantitative phase-field model for void evolution in defect supersaturated environments: a novel introduction of defect reaction asymmetry. https://arxiv.org/abs/2307.15626

Cite the original work for its findings. Save a collection to share your selection of sources.

KEEP EXPLORING

Related papers

arXiv2026

Measuring chiral phonons

Chiral phonons are quantized vibrations where the atomic motion in a solid breaks improper rotation symmetries. In many cases, chiral phonons possess angular momenta and are therefore selective to circularly polarized light. Both fundamental and applied research efforts on chiral phonons have been gaining increasing attention owing to their importance in a variety of fields including spintronics, spin-selective chemical reactions, thermal transport, quantum information processing and biosensing, where the bi-directional spin-lattice coupling enabled by chiral phonons can be harnessed in new ways, and potentially lead to new functionalities. Thus far, the studies of chiral phonons across diverse materials platforms have evolved largely independently within these fields, but the experimental techniques are often interrelated. In this perspective, we present a detailed description, as well as advantages and disadvantages of the current approaches for experimentally measuring chiral phonons in chiral and achiral materials. We conclude with a discussion of new methods for measuring chiral phonons. Ultimately, this work seeks to offer an experimental guide for systematically investigating the properties of chiral phonons in various materials systems and applications.

cond-mat.mtrl-sci↗
arXiv2026

A model of grain growth in UN integrating molecular dynamics, phase-field modeling, and uncertainty quantification

Grain growth kinetics and grain-boundary (GB) properties in uranium mononitride (UN) are investigated through an integrated multiscale framework combining molecular dynamics (MD), phase-field modeling, and surrogate-assisted uncertainty quantification. MD simulations yield GB energies for 27 symmetric tilt boundaries from 0--2000~K, which are consistent with available DFT values. The average GB energy is nearly temperature-independent below 1000~K and increases at higher temperatures. A mechanistic pore-drag model applied to the only available grain growth dataset for actinide nitrides yields a mobility reduction factor of $s \approx 0.93$--$0.99$, statistically indistinguishable from unity, confirming that pore drag is negligible under the experimental conditions. The intrinsic GB mobility is therefore extracted directly from the effective mobility, yielding $M_0 = 2.05\times10^{-15}$~m$^4$/(J$\cdot$s) and $Q_M = 0.89$~eV. Phase-field simulations conducted from 1500--2000~K confirm normal curvature-driven grain growth, with grain size distributions converging to the Hillert-like form. A surrogate-assisted global sensitivity analysis---combining principal component analysis, Gaussian process regression, and Sobol decomposition---reveals that the mobility prefactor $M_0$ dominates output variance at all times, followed by the activation energy $Q_M$, while the GB energy $\gamma$ contributes minimally. These results establish the first quantitative grain growth framework for UN and identify the reduction of uncertainty in $M_0$ and $Q_M$ as the highest-priority target for future experimental efforts.

cond-mat.mtrl-sci↗
arXiv2026

Silicon Solar Cell Design for >30% Efficiency via Singlet Fission

Singlet fission (SF) materials convert high-energy photons into multiple charge carriers, providing a route to exceed the efficiency limits of single-junction silicon solar cells without many of the complexities of multi-junction tandem designs. Following the first demonstration of an SF-enhanced silicon solar cell in 2025, there is a need to understand how SF materials can be effectively integrated into high-efficiency industrial silicon devices and translated from proof of concept to a manufacturable technology. Using coupled optical and electrical simulations, we assess the efficiency potential of several industrially relevant silicon cell architectures combined with SF materials. Interdigitated back-contact (IBC) cells offer the greatest potential for improvement due to unrestricted front-surface access and can achieve efficiencies exceeding 33%. However, performance is highly sensitive to front-surface passivation quality. Appropriate silicon design, particularly controlled surface doping and fixed interfacial charge, can mitigate recombination losses and relax passivation requirements for ultra-thin exciton-transfer layers.

cond-mat.mtrl-sci↗