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arXiv · 2307.06441

Isotope engineering for spin defects in van der Waals materials

Ruotian Gong·Xinyi Du·Eli Janzen·Vincent Liu·Zhongyuan Liu·Guanghui He·Bingtian Ye·Tongcang Li·Norman Y. Yao·James H. Edgar·Erik A. Henriksen·Chong Zu
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Abstract

Spin defects in van der Waals materials offer a promising platform for advancing quantum technologies. Here, we propose and demonstrate a powerful technique based on isotope engineering of host materials to significantly enhance the coherence properties of embedded spin defects. Focusing on the recently-discovered negatively charged boron vacancy center ($\mathrm{V}_{\mathrm{B}}^-$) in hexagonal boron nitride (hBN), we grow isotopically purified $\mathrm{h}{}^{10}\mathrm{B}{}^{15}\mathrm{N}$ crystals. Compared to $\mathrm{V}_{\mathrm{B}}^-$ in hBN with the natural distribution of isotopes, we observe substantially narrower and less crowded $\mathrm{V}_{\mathrm{B}}^-$ spin transitions as well as extended coherence time $T_2$ and relaxation time $T_1$. For quantum sensing, $\mathrm{V}_{\mathrm{B}}^-$ centers in our $\mathrm{h}{}^{10}\mathrm{B}{}^{15}\mathrm{N}$ samples exhibit a factor of $4$ ($2$) enhancement in DC (AC) magnetic field sensitivity. For additional quantum resources, the individual addressability of the $\mathrm{V}_{\mathrm{B}}^-$ hyperfine levels enables the dynamical polarization and coherent control of the three nearest-neighbor ${}^{15}\mathrm{N}$ nuclear spins. Our results demonstrate the power of isotope engineering for enhancing the properties of quantum spin defects in hBN, and can be readily extended to improving spin qubits in a broad family of van der Waals materials.

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Ruotian Gong, Xinyi Du, Eli Janzen, Vincent Liu, Zhongyuan Liu, Guanghui He, Bingtian Ye, Tongcang Li, Norman Y. Yao, James H. Edgar, Erik A. Henriksen, Chong Zu. 2023-07-12. Isotope engineering for spin defects in van der Waals materials. https://doi.org/10.1038/s41467-023-44494-3

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