arXiv ScienceSearch

arXiv · 2307.04947

Chip-Scale, Sub-Hz Fundamental Sub-kHz Integral Linewidth 780 nm Laser through Self-Injection-Locking a Fabry-P\'erot laser to an Ultra-High Q Integrated Resonator

Abstract

Today's state of the art precision experiments in quantum, gravimetry, navigation, time keeping, and fundamental science have strict requirements on the level and spectral distribution of laser frequency noise. For example, the laser interaction with atoms and qubits requires ultra-low frequency noise at multiple offset frequencies due to hyperfine atomic transitions, motional sidebands, and fast pulse sequencing. Chip-scale integration of lasers that meet these requirements is essential for reliability, low-cost, and weight. Here, we demonstrate a significant advancement in atomic precision light sources by realizing a chip-scale, low-cost, 780 nm laser for rubidium atom applications with record-low 640 mHz (white noise floor at 0.2 Hz$^2$/Hz) fundamental and 732 Hz integral linewidths and a frequency noise that is multiple orders of magnitude lower than previous hybrid and heterogeneous self-injection locked 780 nm lasers and lower noise than bulk microresonator implementations. The laser is a Fabry-P\'erot laser diode self-injection locked to an ultra-high Q photonic integrated silicon nitride resonator. This performance is enabled by a 145 million resonator Q with a 30 dB extinction ratio, the highest Q at 780 nm, to the best of our knowledge. We analyze the impact of our frequency noise on specific atomic applications including atomic frequency references, Rydberg quantum gates, and cold atom gravimeters. The photonic integrated resonator is fabricated using a CMOS foundry-compatible, wafer-scale process, with demonstrated integration of other components showing promise for a full system-on-a-chip. This performance is scalable to other visible atomic wavelengths, opening the door to a variety of transitions across many atomic species and enabling low-power, compact, ultra-low noise lasers impacting applications including quantum sensing, computing, clocks and more.

Explore related subjects

Keep this discovery

BibTeXRIS

Andrei Isichenko, Nitesh Chauhan, Kaikai Liu, Mark W. Harrington, Daniel J. Blumenthal. 2023-07-11. Chip-Scale, Sub-Hz Fundamental Sub-kHz Integral Linewidth 780 nm Laser through Self-Injection-Locking a Fabry-P\'erot laser to an Ultra-High Q Integrated Resonator. https://doi.org/10.1038/s41598-024-76699-x

Cite the original work for its findings. Save a collection to share your selection of sources.

KEEP EXPLORING

Related papers

Two-step high-accuracy microwave frequency measurement and time-frequency analysis based on optical frequency combs

Broadband microwave frequency measurement and time-frequency analysis are crucial for applications such as electronic warfare. However, when it comes to ultra wideband signal analysis, traditional electronic methods have high analysis accuracy, but intrinsic electronic bottlenecks limit their real-time analysis. Here, we propose and experimentally demonstrate a two-step microwave frequency measurement and time-frequency analysis method based on optical frequency combs. The system first performs coarse frequency localization over the 0-40 GHz range using stimulated-Brillouin-scattering-assisted frequency-to-time mapping (FTTM) and dual-comb channelized reception. The dual-comb is then reapplied for downconverting the signal under test, followed by digital signal processing to achieve high-accuracy unambiguous frequency extraction. Experimental results show that the system achieves mean single-tone frequency measurement errors of less than 10 kHz over 0-40 GHz. We further experimentally measure multi-tone, linearly frequency-modulated, and V-shaped frequency-modulated signals, demonstrating the proposed method's capability for analyzing complex signals.

physics.optics

A Two-Mirror Faceted Projection System for EUV Lithography

We propose an all-reflective two-mirror projection system for extreme ultraviolet (EUV) lithography operating at exposure wavelengths of $13.5$~nm (Mo/Si) and $11.2$~nm (Ru/Be), delivering a fourfold ($4\times$) demagnification of the periodic mask pattern at a numerical aperture approaching unity ($\mathrm{NA}_{\max} \approx 0.993$). In contrast to conventional EUV projection objectives that incorporate 6--10 aspheric mirrors with an overall optical throughput of less than $15\%$, the proposed design redirects each accepted discrete spatial diffraction order scattered by the mask onto the wafer via a dedicated pair of planar mirror facets. The number of reflections is strictly fixed at two for all accepted orders, retaining $50$--$60\%$ of the power leaving the mask in each accepted order. We derive a spatial geometry providing rigorous optical path length equalization across all diffraction orders, thereby removing order-dependent propagation phase shifts. Individually optimized 30-bilayer Bragg multilayer coatings are designed for each facet using the transfer matrix method combined with global evolutionary optimization algorithms. The architecture is generalized to a three-dimensional vector formulation with a two-dimensionally periodic mask. Utilizing inverse lithography technology, Fourier parameterization, and a differentiable electromagnetic modal waveguide solver, we solve the synthesis problem for binary absorber masks (La absorber on a Ru/Be/Sr multilayer mirror). We demonstrate simulated aerial images of sub-10-nm features on the wafer (isolated peaks with a full width at half maximum (FWHM) of approximately $5.4$~nm and line pairs with a critical dimension of $6$~nm) and find that the two peaks remain resolved for the tested wafer defocus values from $0$ to $5$~nm along the $z$-axis.

physics.optics

Antimony for broadband nanophotonics across the ultraviolet, visible and infrared

Semimetal elemental antimony (Sb) nanostructures show great potential for applications where nanophotonic properties play a key role, such as phase-change optical memories, non-linear optical elements, photothermal therapy agents, photodetectors and photocatalysts. However, designing advanced Sb-based photonic devices critically requires an accurate and reliable knowledge of the optical response of bulk and nanoscale Sb. Herein, we report for the first time a fully consistent and accurately measured dielectric function for Sb nanoscale films in a wide spectral range from the ultraviolet to the far infrared (4 - 0.04 eV, i.e. ~ 0.3 - 30 $\mu$m), surpassing previous reports that explored a limited spectral range. It is found that the Sb spectral response is driven exclusively by giant interband transitions in the visible up to mid infrared (4 - 0.4 eV, i.e. ~ 0.3 - 3 $\mu$m), and that their contribution dominates over that of free carriers down to 0.12 eV (i.e. ~ 10 $\mu$m). Such spectral response enables Sb nanostructures to display spectrally selective and tunable nanophotonic resonances. First, we showcase interband plasmonic resonances in the visible-to-near infrared for Sb nanogratings. Second, we report giant refractive index dielectric resonances in the mid infrared for nanostructured Sb/dielectric/metal resonant cavities. These findings open a pathway to optimized planar Sb nanoscale designs enabling a tailored light-matter interaction, which will be useful for integrated data, telecom, medical, optoelectronic and energy conversion devices operating in a broad spectral range.

physics.optics