Valley-controlled transport in graphene/ WSe$_{2}$ heterostructures under an off-resonant polarized light

Abstract

We investigate the electronic dispersion and transport properties of graphene/WSe$_{2}$ heterostructures in the presence of a proximity-induced spin-orbit coupling $λ_{v}$, sublattice potential $Δ$, and an off-resonant circularly polarized light of frequency $Ω$ that renormalizes $Δ$ to $\barΔ_{ηp} = Δ+ηp Δ_Ω $ with $η$ and $p$ the valley and polarization indices, respectively, and $ Δ_Ω $ the gap due to the off-resonant circularly polarized light. Using a low-energy Hamiltonian we find that the interplay between different perturbation terms leads to inverted spin-orbit coupled bands. At high $Ω$ we study the band structure and dc transport using the Floquet theory and linear response formalism, respectively. We find that the inverted band structure transfers into the direct band one when the off-resonant light is present. The valley-Hall conductivity behaves as an even function of the Fermi energy in the presence and absence of this light. At $Δ_Ω$ = $λ_{v}$ - $Δ$ a transition occurs from the valley-Hall phase to the anomalous Hall phase. In addition, the valley-Hall conductivity switches sign when the polarization of the off-resonant light changes. The valley polarization vanishes for $Δ_Ω$ = 0 but it is finite for $Δ_Ω$ $\neq$ 0 and reflects the lifting of the valley degeneracy of the energy levels, for $Δ_Ω \neq 0$, when the off-resonant light is present. The corresponding spin polarization, present for $Δ_Ω$ = 0, increases for $Δ_Ω$ $\neq$ 0. Further, pure $K$ or $K^{\prime}$ valley polarization is generated when $Δ_Ω$ changes sign. Also, the charge Hall conductivity is finite for $Δ_Ω\neq 0$ and changes sign when the handedness of the light polarization changes.