arXiv · 2307.00708
Domain control and periodic poling of epitaxial ScAlN
Abstract
ScAlN is an emerging ferroelectric material that possesses large band gap, strong piezoelectricity, and holds great promises for enhanced \chi^{(2)} nonliearity. In this study, we demonstrate high-fidelity ferroelectric domain switching and periodic poling of Al-polar ScAlN thin film epitaxially grown on on c-axis sapphire substrate using gallium nitride as a buffer layer. Uniform poling of ScAlN with periods ranging from 2 um to 0.4 um is realized. The ability to lithographically control the polarization of epitaxial ScAlN presents a critical advance for its further exploitation in ferroelectric storage and nonlinear optics applications.
Explore related subjects
Keep this discovery
Fengyan Yang, Ding Wang, Ping Wang, Juanjuan Lu, Zetian Mi, Hong X. Tang Tang. 2023-07-03. Domain control and periodic poling of epitaxial ScAlN. https://arxiv.org/abs/2307.00708
Cite the original work for its findings. Save a collection to share your selection of sources.