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arXiv · 2307.00429

Energy-Efficient Photonic Memory Based on Electrically Programmable Embedded III-V/Si Memristors: Switches and Filters

Stanley Cheung·Bassem Tossoun·Yuan Yuan·Yiwei Peng·Yingtao Hu·Geza Kurczveil·Di Liang·Raymond G. Beausoleil
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Abstract

We demonstrate non-volatile optical functionality by embedding multi-layer $HfO_2/Al_2O_3$ memristors with III-V/Si photonics. The wafer-bonded III-V/Si memristor facilitates non-volatile optical functionality for a variety of devices such as Mach-Zehnder Interferometers (MZIs), and (de-)interleaver filters. The MZI optical memristor exhibits non-volatile optical phase shifts $> \pi (\Delta n_{g} > 2.70 \times 10^{-3}$) with ~ 30 dB extinction ratio while consuming 0 electrical power consumption in a true "set-and-forget" operation. We demonstrate 6 non-volatile states with each state capable of 4 Gbps modulation. III-V/Si (de-)interleavers were also demonstrated to exhibit memristive non-volatile passband transformation with full set/reset states. Time duration tests were performed on all devices and indicated non-volatility up to 24 hours and most likely beyond. To the best of our knowledge, we have demonstrated for the first time, non-volatile III-V/Si optical memristors with the largest electric-field driven phase shifts and reconfigurable filters with the lowest power consumption.

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Stanley Cheung, Bassem Tossoun, Yuan Yuan, Yiwei Peng, Yingtao Hu, Geza Kurczveil, Di Liang, Raymond G. Beausoleil. 2023-07-01. Energy-Efficient Photonic Memory Based on Electrically Programmable Embedded III-V/Si Memristors: Switches and Filters. https://arxiv.org/abs/2307.00429

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