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arXiv · 2306.10697

Tunneling valley Hall effect driven by tilted Dirac fermions

Shu-Hui Zhang·Ding-Fu Shao·Zi-An Wang·Jin Yang·Wen Yang·Evgeny Y. Tsymbal
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Abstract

Valleytronics is a research field utilizing a valley degree of freedom of electrons for information processing and storage. A strong valley polarization is critical for realistic valleytronic applications. Here, we predict a tunneling valley Hall effect (TVHE) driven by tilted Dirac fermions in all-in-one tunnel junctions based on a two-dimensional (2D) valley material. Different doping of the electrode and spacer regions in these tunnel junctions results in momentum filtering of the tunneling Dirac fermions, generating a strong transverse valley Hall current dependent on the Dirac-cone tilting. Using the parameters of an existing 2D valley material, we demonstrate that such a TVHE is much stronger than that induced by the intrinsic Berry curvature mechanism reported previously. Finally, we predict that resonant tunneling can occur in a tunnel junction with properly engineered device parameters such as the spacer width and transport direction, providing significant enhancement of the valley Hall angle. Our work opens a new approach to generate valley polarization in realistic valleytronic systems.

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Shu-Hui Zhang, Ding-Fu Shao, Zi-An Wang, Jin Yang, Wen Yang, Evgeny Y. Tsymbal. 2023-06-19. Tunneling valley Hall effect driven by tilted Dirac fermions. https://arxiv.org/abs/2306.10697

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