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arXiv · 2306.05837

Micromotion compensation of trapped ions by qubit transition and direct scanning of dc voltages

Woojun Lee·Daun Chung·Jiyong Kang·Honggi Jeon·Changhyun Jung·Dong-Il "Dan" Cho·Taehyun Kim
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Abstract

Excess micromotion is detrimental to accurate qubit control of trapped ions, thus measuring and minimizing it is crucial. In this paper, we present a simple approach for measuring and suppressing excess micromotion of trapped ions by leveraging the existing laser-driven qubit transition scheme combined with direct scanning of dc voltages. The compensation voltage is deduced by analyzing the Bessel expansion of a scanned qubit transition rate. The method provides a fair level of sensitivity for practical quantum computing applications, while demanding minimal deviation of trap condition. By accomplishing compensation of excess micromotion in the qubit momentum-excitation direction, the scheme offers an additional avenue for excess micromotion compensation, complementing existing compensation schemes.

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Woojun Lee, Daun Chung, Jiyong Kang, Honggi Jeon, Changhyun Jung, Dong-Il "Dan" Cho, Taehyun Kim. 2023-06-09. Micromotion compensation of trapped ions by qubit transition and direct scanning of dc voltages. https://doi.org/10.1364/oe.497721

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