Growth of self-integrated atomic quantum wires and junctions of a Mott semiconductor

Abstract

Continued advances in quantum technologies rely on producing nanometer-scale wires. Although several state-of-the-art nanolithographic technologies and bottom-up synthesis processes have been used to engineer such wires, critical challenges remain in growing uniform atomic-scale crystalline wires and constructing their network structures. Here we discover a simple method to fabricate atomic-scale wires with various arrangements, including stripes, X-, Y-junctions, and nanorings. Single-crystalline atomic-scale wires of a Mott insulator, whose band gap is comparable to those of wide-gap semiconductors, are spontaneously grown on graphite substrates \DEL{and epitaxial monolayer graphene on SiC }by pulsed-laser deposition. These wires are one-unit-cell-thick and have an exact width of two- and four-unit-cells (1.4 and 2.8\,nm) and lengths up to a few $\mu m$. We show that the non-equilibrium reaction-diffusion processes may play an essential role in atomic pattern formation. Our findings offer a new perspective on the non-equilibrium self-organization phenomena on an atomic scale, paving a unique way for the quantum architecture of nano-network.