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arXiv · 2305.07861

Ultra-wideband Waveguide-coupled Photodiodes Heterogeneously Integrated on a Thin-film Lithium Niobate Platform

Chao Wei·Youren Yu·Ziyun Wang·Lin Jiang·Zhongming Zeng·Jia Ye·Xihua Zou·Wei Pan·Xiaojun Xie·Lianshan Yan
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Abstract

With the advantages of large electro-optical coefficient, wide transparency window, and strong optical confinement, thin-film lithium niobate (TFLN) technique has enabled the development of various high-performance optoelectronics devices, ranging from the ultra-wideband electro-optic modulators to the high-efficient quantum sources. However, the TFLN platform does not natively promise lasers and photodiodes. This study presents an InP/InGaAs modified uni-traveling carrier (MUTC) photodiodes heterogeneously integrated on the TFLN platform with a record-high 3-dB bandwidth of 110 GHz and a responsivity of 0.4 A/W at a 1550-nm wavelength. It is implemented on a wafer-level TFLN-InP heterogeneous integration platform and is suitable for the large-scale, multi-function, and high-performance TFLN photonic integrated circuits.

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Chao Wei, Youren Yu, Ziyun Wang, Lin Jiang, Zhongming Zeng, Jia Ye, Xihua Zou, Wei Pan, Xiaojun Xie, Lianshan Yan. 2023-05-13. Ultra-wideband Waveguide-coupled Photodiodes Heterogeneously Integrated on a Thin-film Lithium Niobate Platform. https://doi.org/10.37188/lam.2023.030

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