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arXiv · 2304.11724

Third Harmonic Generation And Photoluminescence Measurements in Zinc Oxide And Aluminum doped Zinc Oxide Thin Films Grown by Atomic Layer Deposition

Calford Otieno
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Abstract

Zinc Oxide is a thoroughly studied wide-bandgap semiconductor possessing excellent optical and electronic properties at room temperature. The renewed interest in this material has been generated by doping with various impurities in order to further enhance versatile optoelectronic responses for practical applications. Specifically, Aluminum-doped Zinc Oxide is an emerging transparent conducting oxide for photovoltaic applications. Here I propose to conduct a series of experimental studies on broadband optical nonlinearity as well as photoluminescence from Aluminum doped Zinc Oxide as a function of Aluminum doping. The results of this study include studies including 1) Bandgap measurements 2) wavelength-dependent third harmonic generation and 3) one-photon-induced Photoluminescence. The most notable result is a multifold enhanced third-order nonlinear optical response from weakly doped Aluminum doped Zinc Oxide (up to 4%) in comparison with the undoped counterpart. The observed nonlinear optical trend as a function of Aluminum doping is correlated to the modification of the corresponding band structure. The Aluminum doping effect is extensively investigated in the context of absorption and Photoluminescence.

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Calford Otieno. 2023-04-23. Third Harmonic Generation And Photoluminescence Measurements in Zinc Oxide And Aluminum doped Zinc Oxide Thin Films Grown by Atomic Layer Deposition. https://arxiv.org/abs/2304.11724

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