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arXiv · 2303.06722

STM observation of the hinge-states of bismuth nanocrystals

Tianzhen Zhang·Valeria Sheina·Sergio Vlaic·Stéphane Pons·Dimitri Roditchev·Christophe David·Guillemin Rodary·Jean-Christophe Girard·Hervé Aubin
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Abstract

The recent application of topological quantum chemistry to rhombohedral bismuth established the non-trivial band structure of this material. This is a 2$^{nd}$order topological insulator characterized by the presence of topology-imposed hinge-states. The spatial distribution of hinge-states and the possible presence of additional symmetry-protected surface-states is expected to depend on the crystal shape and symmetries. To explore this issue, we have grown bismuth nanocrystals in the tens of nanometers on the $(110)$ surface of InAs. By scanning tunneling spectroscopy, we mapped the local density of states on all facets and identified the presence of the hinge-states at the intersection of all facets. Our study confirm the classification of bulk bismuth as a 2$^{nd}$order topological insulator. We propose that the ubiquitous presence of the hinge-states result from their tunnel-coupling across the nanometer-sized facets.

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Tianzhen Zhang, Valeria Sheina, Sergio Vlaic, Stéphane Pons, Dimitri Roditchev, Christophe David, Guillemin Rodary, Jean-Christophe Girard, Hervé Aubin. 2023-03-12. STM observation of the hinge-states of bismuth nanocrystals. https://doi.org/10.1103/physrevb.108.085422

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