arXiv ScienceSearch

arXiv · 2302.14455

Optimization of Permalloy properties for magnetic field sensors using He$^+$ irradiation

Abstract

Permalloy, despite being a widely utilized soft magnetic material, still calls for optimization in terms of magnetic softness and magnetostriction for its use in magnetoresistive sensor applications. Conventional annealing methods are often insufficient to locally achieve the desired properties for a narrow parameter range. In this study, we report a significant improvement of the magnetic softness and magnetostriction in a 30 nm Permalloy film after He$^+$ irradiation. Compared to the as-deposited state, the irradiation treatment reduces the induced anisotropy by a factor ten and the hard axis coercivity by a factor five. In addition, the effective magnetostriction of the film is significantly reduced by a factor ten - below $1\times10^{-7}$ - after irradiation. All the above mentioned effects can be attributed to the isotropic crystallite growth of the Ni-Fe alloy and to the intermixing at the magnetic layer interfaces under light ion irradiation. We support our findings with X-ray diffraction analysis of the textured Ni$_{81}$Fe$_{19}$ alloy. Importantly, the sizable magnetoresistance is preserved after the irradiation. Our results show that compared to traditional annealing methods, the use of He$^+$ irradiation leads to significant improvements in the magnetic softness and reduces strain cross sensitivity in Permalloy films required for 3D positioning and compass applications. These improvements, in combination with the local nature of the irradiation process make our finding valuable for the optimization of monolithic integrated sensors, where classic annealing methods cannot be applied due to complex interplay within the components in the device.

Explore related subjects

Keep this discovery

BibTeXRIS

Giovanni Masciocchi, Johannes Wilhelmus van der Jagt, Maria-Andromachi Syskaki, Jürgen Langer, Gerhard Jakob, Jeffrey McCord, Benjamin Borie, Andreas Kehlberger, Dafine Ravelosona, Mathias Kläui. 2023-02-28. Optimization of Permalloy properties for magnetic field sensors using He$^+$ irradiation. https://arxiv.org/abs/2302.14455

Cite the original work for its findings. Save a collection to share your selection of sources.

KEEP EXPLORING

Related papers

Measuring chiral phonons

Chiral phonons are quantized vibrations where the atomic motion in a solid breaks improper rotation symmetries. In many cases, chiral phonons possess angular momenta and are therefore selective to circularly polarized light. Both fundamental and applied research efforts on chiral phonons have been gaining increasing attention owing to their importance in a variety of fields including spintronics, spin-selective chemical reactions, thermal transport, quantum information processing and biosensing, where the bi-directional spin-lattice coupling enabled by chiral phonons can be harnessed in new ways, and potentially lead to new functionalities. Thus far, the studies of chiral phonons across diverse materials platforms have evolved largely independently within these fields, but the experimental techniques are often interrelated. In this perspective, we present a detailed description, as well as advantages and disadvantages of the current approaches for experimentally measuring chiral phonons in chiral and achiral materials. We conclude with a discussion of new methods for measuring chiral phonons. Ultimately, this work seeks to offer an experimental guide for systematically investigating the properties of chiral phonons in various materials systems and applications.

cond-mat.mtrl-sci

A model of grain growth in UN integrating molecular dynamics, phase-field modeling, and uncertainty quantification

Grain growth kinetics and grain-boundary (GB) properties in uranium mononitride (UN) are investigated through an integrated multiscale framework combining molecular dynamics (MD), phase-field modeling, and surrogate-assisted uncertainty quantification. MD simulations yield GB energies for 27 symmetric tilt boundaries from 0--2000~K, which are consistent with available DFT values. The average GB energy is nearly temperature-independent below 1000~K and increases at higher temperatures. A mechanistic pore-drag model applied to the only available grain growth dataset for actinide nitrides yields a mobility reduction factor of $s \approx 0.93$--$0.99$, statistically indistinguishable from unity, confirming that pore drag is negligible under the experimental conditions. The intrinsic GB mobility is therefore extracted directly from the effective mobility, yielding $M_0 = 2.05\times10^{-15}$~m$^4$/(J$\cdot$s) and $Q_M = 0.89$~eV. Phase-field simulations conducted from 1500--2000~K confirm normal curvature-driven grain growth, with grain size distributions converging to the Hillert-like form. A surrogate-assisted global sensitivity analysis---combining principal component analysis, Gaussian process regression, and Sobol decomposition---reveals that the mobility prefactor $M_0$ dominates output variance at all times, followed by the activation energy $Q_M$, while the GB energy $\gamma$ contributes minimally. These results establish the first quantitative grain growth framework for UN and identify the reduction of uncertainty in $M_0$ and $Q_M$ as the highest-priority target for future experimental efforts.

cond-mat.mtrl-sci

Silicon Solar Cell Design for >30% Efficiency via Singlet Fission

Singlet fission (SF) materials convert high-energy photons into multiple charge carriers, providing a route to exceed the efficiency limits of single-junction silicon solar cells without many of the complexities of multi-junction tandem designs. Following the first demonstration of an SF-enhanced silicon solar cell in 2025, there is a need to understand how SF materials can be effectively integrated into high-efficiency industrial silicon devices and translated from proof of concept to a manufacturable technology. Using coupled optical and electrical simulations, we assess the efficiency potential of several industrially relevant silicon cell architectures combined with SF materials. Interdigitated back-contact (IBC) cells offer the greatest potential for improvement due to unrestricted front-surface access and can achieve efficiencies exceeding 33%. However, performance is highly sensitive to front-surface passivation quality. Appropriate silicon design, particularly controlled surface doping and fixed interfacial charge, can mitigate recombination losses and relax passivation requirements for ultra-thin exciton-transfer layers.

cond-mat.mtrl-sci