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Thermal-Carrier-Escape Mitigation in a Quantum-Dot-In-Perovskite Intermediate Band Solar Cell via Bandgap Engineering

Ugur D. Menda·Guilherme Ribeiro·Jonas Deuermeier·Esther López·Daniela Nunes·Santanu Jana·Irene Artacho·Rodrigo Martins·Iván Mora-Seró·Manuel J. Mendes·Iñigo Ramiro
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Abstract

By harvesting a wider range of the solar spectrum, intermediate band solar cells (IBSCs) can achieve efficiencies 50% higher than conventional single-junction solar cells. For this, additional requirements are imposed to the light-absorbing semiconductor, which must contain a collection of in-gap levels, called intermediate band (IB), optically coupled to but thermally decoupled from the valence and conduction bands (VB and CB). Quantum-dot-in-perovskite (QDiP) solids, where inorganic quantum dots (QDs) are embedded in a halide perovskite matrix, have been recently suggested as a promising material platform for developing IBSCs. In this work, QDiP solids with excellent morphological and structural quality and strong absorption and emission related to the presence of in-gap QD levels are synthesized. With them, QDiP-based IBSCs are fabricated and, by means of temperature-dependent photocurrent measurements, it is shown that the IB is strongly thermally decoupled from the valence and conduction bands. The activation energy of the IB$\rightarrow$CB thermal escape of electrons is measured to be 204 meV, resulting in the mitigation of this detrimental process even under room-temperature operation, thus fulfilling the first mandatory requisite to enable high-efficiency IBSCs.

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Ugur D. Menda, Guilherme Ribeiro, Jonas Deuermeier, Esther López, Daniela Nunes, Santanu Jana, Irene Artacho, Rodrigo Martins, Iván Mora-Seró, Manuel J. Mendes, Iñigo Ramiro. 2023-02-26. Thermal-Carrier-Escape Mitigation in a Quantum-Dot-In-Perovskite Intermediate Band Solar Cell via Bandgap Engineering. https://doi.org/10.1021/acsphotonics.3c00738

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