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arXiv · 2302.07554

Signatures of van Hove singularities in the anisotropic in-plane optical conductivity of the topological semimetal Nb$_3$SiTe$_6$

J. Ebad-Allah·A. A. Tsirlin·Y. L. Zhu·Z. Q. Mao·C. A. Kuntscher
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Abstract

We present a temperature-dependent infrared spectroscopy study on the layered topological semimetal Nb$_3$SiTe$_6$ combined with density-functional theory (DFT) calculations of the electronic band structure and optical conductivity. Our results reveal an anisotropic behavior of the in-plane ($ac$-plane) optical conductivity, with three pronounced excitations located at around 0.15, 0.28, and 0.41~eV for the polarization of the incident radiation along the $c$ axis. These excitations are well reproduced in the theoretical spectra. Based on the \textit{ab initio} results, the excitations around 0.15 eV and 0.28 eV are interpreted as fingerprints of van Hove singularities in the electronic band structure and compared to the findings for other topological semimetals.

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J. Ebad-Allah, A. A. Tsirlin, Y. L. Zhu, Z. Q. Mao, C. A. Kuntscher. 2023-02-15. Signatures of van Hove singularities in the anisotropic in-plane optical conductivity of the topological semimetal Nb$_3$SiTe$_6$. https://doi.org/10.1103/physrevb.107.115115

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