arXiv · 2302.06847
An in-situ thermoelectric measurement apparatus inside a thermal-evaporator
Abstract
At the ultra-thin limit below 20 nm, a film's electrical conductivity, thermal conductivity, or thermoelectricity depends heavily on its thickness. In most studies, each sample is fabricated one at a time, potentially leading to considerable uncertainty in later characterizations. We design and build an in-situ apparatus to measure thermoelectricity during their deposition inside a thermal evaporator. A temperature difference of up to 2 K is generated by a current passing through an on-chip resistor patterned using photolithography. The Seebeck voltage is measured on a Hall bar structure of a film deposited through a shadow mask. The measurement system is calibrated carefully before loading into the thermal evaporator. This in-situ thermoelectricity measurement system has been thoroughly tested on various materials, including Bi, Te, and Bi$_2$Te$_3$, at high temperatures up to 500 K.
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Kien Trung Nguyen, Giang Bui-Thanh, Hong Thi Pham, Thuat Nguyen-Tran, Chi Hieu Hoang, Hung Q. Nguyen. 2023-02-14. An in-situ thermoelectric measurement apparatus inside a thermal-evaporator. https://doi.org/10.1088/1361-6501/acde9c
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