arXiv ScienceSearch

arXiv · 2302.02226

Proposal that interpretation of field emission current-voltage characteristics should be treated as a specialized form of electrical engineering

Abstract

This article proposes that we should think differently about predicting and interpreting measured field electron emission (FE) current-voltage [I(V)] characteristics. It is commonly assumed that I(V) data interpretation is a problem in emission physics and related electrostatics. Many experimentalists then apply Fowler-Nordheim plot methodology, developed in 1929. However, with modern emitting materials this 90-year-old interpretation methodology often fails (maybe in nearly 50% of cases), and yields spurious values for characterization parameters, particularly field enhancement factors. This has generated an unreliable literature, and validity checks on experimental I(V) data are nearly always needed before use. A new check, supplementing existing checks, is described. Twelve different "system complications" that, acting singly or in combinations, can cause validity-check failure are identified. A top-level path forwards from this unsatisfactory situation is proposed. The term "field electron emission system (FE system)" is defined to include all aspects of an experimental system that affect the measured I(V) characteristics. The analysis of FE systems should now be regarded as a specialized form of electronic/electrical engineering, provisionally called "FE Systems Engineering". In this approach, the I(V) relationship is split: (a) the current is expressed as a function I(F_C) of the local surface-field magnitude F_C at some defined emitter surface location "C"; and (b) the relationship between F_C and measured voltage V is expressed and determined separately. Determining I(F_C) is mostly a problem in emission physics; determining the relationship (F_C)(V) depends on system electrostatics and (for systems failing a validity check) on other aspects of FE Systems Engineering. The scope of FE Systems Engineering, and some related research implications and problems, are outlined.

Explore related subjects

Keep this discovery

Explore connections, maps & timelines

BibTeXRIS

Richard G. Forbes. 2023-02-04. Proposal that interpretation of field emission current-voltage characteristics should be treated as a specialized form of electrical engineering. https://doi.org/10.1116/6.0002478

Cite the original work for its findings. Save a collection to share your selection of sources.

KEEP EXPLORING

Related papers

Substrate-driven topological engineering in plasmonic Su-Schrieffer-Heeger chains

We demonstrate the possibility of engineering the topological band structure of a plasmonic Su-Schrieffer-Heeger (SSH) chain through the interaction with its electromagnetic environment. We find that the long-range interaction of the in-plane modes of the SSH chain with the surface plasmon polaritons of a planar substrate introduces a band hybridization connected to a change of the Zak phase. On the other hand, the short-range interaction with the substrate introduces a band touching, again with a change in the Zak phase. Surprisingly, this second mechanism enables the emergence of topologically protected edge modes for parameters which correspond to the topologically trivial phase for an isolated plasmonic SSH chain. We study these mechanisms by changing the chain-substrate distance and the dimerization parameter. Finally, we discuss the robustness against disorder and, as one example, the impact of the observed effects on the near-field radiative heat transfer and the local density of states along the chain. Our findings pave the way to the engineering of edge modes in plasmonic topological configurations via the coupling to a plasmonic environment.

cond-mat.mes-hall

Hysteresis-Driven Radiative Mpemba Effect in Phase-Change Nanostructures

The Mpemba effect states that initially hotter systems cool faster than colder ones. While known in convective, conductive, and quantum systems, its radiative analogue is unexplored. Here, this anomaly is realized via phase-change hysteresis of a VO$_2$ nanoparticle near a SiC substrate. After analytically deriving an onset condition, the phase space is mapped. Crucially, latent heat acts as a thermal buffer enabling both ordinary and inverse effects. Near-field coupling governs the relaxation time and enables a passive effect where memory is stored externally via substrate reflection.

cond-mat.mes-hall

Fast universal parametric spin control in an acoustically modulated quantum dot

Quantum communication, distributed computing, and hybrid architectures rely on nodes enabling coherent control of qubits and coupling to propagating quantum modes. While semiconductor quantum-dot (QD) spins couple to microwave and optical photons, weak interaction with mechanical waves has limited the integration of single-QD spin qubits into on-chip, acoustically coupled hybrid systems. The existing theory of acoustic QD spin control suffers from a limited range of rotation-axis angles, enforcing complex realizations of gate primitives and long gate times, leaving little margin against decoherence from trion decay and quasi-static nuclear-spin noise. We propose parametric control that overcomes these problems. We use far-detuned optical coupling to a trion state to dress and thus mix spin states, combined with acoustic modulation of the optical transition energy. Instead of relying on direct acoustic resonance with the spin splitting that leads to significant bottlenecks, we induce spin rotations parametrically via resonance with the dressed-spin splitting. We thus develop a spin analog of the ``swing-up'' charge-state excitation. Our scheme provides fast universal qubit control with nearly arbitrary rotation axes. Our ${\sim}$155 ps Pauli-$X$ gate duration is ${\sim}290\times$ faster than in the previous acousto-optical formulation and ${\sim}14\times$ faster than optical Faraday-geometry spin rotation. The parametric scheme naturally enables higher-harmonic processes. Numerical simulations for ${\sim}44$ GHz acoustic driving show average gate fidelity $\ge99.9\%$ even for uncooled nuclear-spin environments of GaAs and InAs QDs for trion lifetime $\gtrsim1.25$ ns. These metrics suggest practically usable control and may introduce a spin-phonon interface with high interaction rates, versatility, and multi-phonon processes, essential for future acoustically coupled hybrid architectures.

cond-mat.mes-hall