20 ps Time Resolution with a Fully-Efficient Monolithic Silicon Pixel Detector without Internal Gain Layer

S. Zambito; M. Milanesio; T. Moretti; L. Paolozzi; M. Munker; R. Cardella; T. Kugathasan; F. Martinelli; A. Picardi; M. Elviretti; H. Rücker; A. Trusch; F. Cadoux; R. Cardarelli; S. Débieux; Y. Favre; C. A. Fenoglio; D. Ferrere; S. Gonzalez-Sevilla; L. Iodice; R. Kotitsa; C. Magliocca; M. Nessi; A. Pizarro-Medina; J. Sabater Iglesias; J. Saidi; M. Vicente Barreto Pinto; G. Iacobucci

doi:10.1088/1748-0221/18/03/p03047

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arXiv · 2301.12244

20 ps Time Resolution with a Fully-Efficient Monolithic Silicon Pixel Detector without Internal Gain Layer

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Abstract

A second monolithic silicon pixel prototype was produced for the MONOLITH project. The ASIC contains a matrix of hexagonal pixels with 100 {\mu}m pitch, readout by a low-noise and very fast SiGe HBT frontend electronics. Wafers with 50 {\mu}m thick epilayer of 350 {\Omega}cm resistivity were used to produce a fully depleted sensor. Laboratory and testbeam measurements of the analog channels present in the pixel matrix show that the sensor has a 130 V wide bias-voltage operation plateau at which the efficiency is 99.8%. Although this prototype does not include an internal gain layer, the design optimised for timing of the sensor and the front-end electronics provides a time resolutions of 20 ps.

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S. Zambito, M. Milanesio, T. Moretti, L. Paolozzi, M. Munker, R. Cardella, T. Kugathasan, F. Martinelli, A. Picardi, M. Elviretti, H. Rücker, A. Trusch, F. Cadoux, R. Cardarelli, S. Débieux, Y. Favre, C. A. Fenoglio, D. Ferrere, S. Gonzalez-Sevilla, L. Iodice, R. Kotitsa, C. Magliocca, M. Nessi, A. Pizarro-Medina, J. Sabater Iglesias, J. Saidi, M. Vicente Barreto Pinto, G. Iacobucci. 2023-01-28. 20 ps Time Resolution with a Fully-Efficient Monolithic Silicon Pixel Detector without Internal Gain Layer. https://doi.org/10.1088/1748-0221/18/03/p03047

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