arXiv ScienceSearch

arXiv · 2212.10932

High-temperature stable refractory high-entropy nanoalloys with enhanced sinterability

Abstract

Nanocrystalline alloys (nanoalloys) are prone to grain growth. It is known that grain boundary segregation and precipitation can stabilize nanoalloys, but the stabilization becomes less effective at high temperatures and adding grain growth inhibitors often reduces sinterability. Herein, we have simultaneously achieved improved sinterability and exceptional high-temperature stability for a class of MoNbTaTiW-based refractory high-entropy nanoalloys (RHENs). Bulk pellets of RHENs were fabricated through planetary ball milling and spark plasma sintering, achieving 93-96% relative densities with 50-100 nm grain sizes for three compositions. For example, Mo17.8Nb17.8Ta17.8Ti17.8W17.8Ni6Zr5 sintered at 1300 {\deg}C attained ~96% relative density with ~55 nm mean grain size. Moreover, these RHENs exhibited exceptional stability at 1300 {\deg}C. Both Ti17.8Nb17.8Mo17.8Ta17.8W17.8Ni6Zr5 and Mo18.8Nb18.8Ta18.8Ti18.8W18.8Ni6 retained <150 nm grain sizes with >96% of the theoretical densities after five hours annealing at 1300 {\deg}C. Notably, the addition of Ni, a well-known sintering aid for activated sintering of refractory metals such as W and Mo, in high-entropy MoNbTaTiW can promote sintering while maintaining high-temperature stability against rapid grain growth, which can be explained by hypothesized effects of high-entropy grain boundaries. These RHENs possess some of the highest temperature stability achieved for nanoalloys and ultrafine-grained metals.

Explore related subjects

Keep this discovery

BibTeXRIS

Mingde Qin, Sashank Shivakumar, Jian Luo. 2022-12-21. High-temperature stable refractory high-entropy nanoalloys with enhanced sinterability. https://arxiv.org/abs/2212.10932

Cite the original work for its findings. Save a collection to share your selection of sources.

KEEP EXPLORING

Related papers

Measuring chiral phonons

Chiral phonons are quantized vibrations where the atomic motion in a solid breaks improper rotation symmetries. In many cases, chiral phonons possess angular momenta and are therefore selective to circularly polarized light. Both fundamental and applied research efforts on chiral phonons have been gaining increasing attention owing to their importance in a variety of fields including spintronics, spin-selective chemical reactions, thermal transport, quantum information processing and biosensing, where the bi-directional spin-lattice coupling enabled by chiral phonons can be harnessed in new ways, and potentially lead to new functionalities. Thus far, the studies of chiral phonons across diverse materials platforms have evolved largely independently within these fields, but the experimental techniques are often interrelated. In this perspective, we present a detailed description, as well as advantages and disadvantages of the current approaches for experimentally measuring chiral phonons in chiral and achiral materials. We conclude with a discussion of new methods for measuring chiral phonons. Ultimately, this work seeks to offer an experimental guide for systematically investigating the properties of chiral phonons in various materials systems and applications.

cond-mat.mtrl-sci

A model of grain growth in UN integrating molecular dynamics, phase-field modeling, and uncertainty quantification

Grain growth kinetics and grain-boundary (GB) properties in uranium mononitride (UN) are investigated through an integrated multiscale framework combining molecular dynamics (MD), phase-field modeling, and surrogate-assisted uncertainty quantification. MD simulations yield GB energies for 27 symmetric tilt boundaries from 0--2000~K, which are consistent with available DFT values. The average GB energy is nearly temperature-independent below 1000~K and increases at higher temperatures. A mechanistic pore-drag model applied to the only available grain growth dataset for actinide nitrides yields a mobility reduction factor of $s \approx 0.93$--$0.99$, statistically indistinguishable from unity, confirming that pore drag is negligible under the experimental conditions. The intrinsic GB mobility is therefore extracted directly from the effective mobility, yielding $M_0 = 2.05\times10^{-15}$~m$^4$/(J$\cdot$s) and $Q_M = 0.89$~eV. Phase-field simulations conducted from 1500--2000~K confirm normal curvature-driven grain growth, with grain size distributions converging to the Hillert-like form. A surrogate-assisted global sensitivity analysis---combining principal component analysis, Gaussian process regression, and Sobol decomposition---reveals that the mobility prefactor $M_0$ dominates output variance at all times, followed by the activation energy $Q_M$, while the GB energy $\gamma$ contributes minimally. These results establish the first quantitative grain growth framework for UN and identify the reduction of uncertainty in $M_0$ and $Q_M$ as the highest-priority target for future experimental efforts.

cond-mat.mtrl-sci

Silicon Solar Cell Design for >30% Efficiency via Singlet Fission

Singlet fission (SF) materials convert high-energy photons into multiple charge carriers, providing a route to exceed the efficiency limits of single-junction silicon solar cells without many of the complexities of multi-junction tandem designs. Following the first demonstration of an SF-enhanced silicon solar cell in 2025, there is a need to understand how SF materials can be effectively integrated into high-efficiency industrial silicon devices and translated from proof of concept to a manufacturable technology. Using coupled optical and electrical simulations, we assess the efficiency potential of several industrially relevant silicon cell architectures combined with SF materials. Interdigitated back-contact (IBC) cells offer the greatest potential for improvement due to unrestricted front-surface access and can achieve efficiencies exceeding 33%. However, performance is highly sensitive to front-surface passivation quality. Appropriate silicon design, particularly controlled surface doping and fixed interfacial charge, can mitigate recombination losses and relax passivation requirements for ultra-thin exciton-transfer layers.

cond-mat.mtrl-sci