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arXiv · 2212.05924

The effect of temperature and excitation energy on Raman scattering in bulk HfS$_2$

Igor Antoniazzi·Natalia Zawadzka·Magdalena Grzeszczyk·Tomasz Woźniak·Jordi Ibáñez·Zahir Muhammad·Weisheng Zhao·Maciej R. Molas·Adam Babiński
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Abstract

Raman scattering (RS) in bulk hafnium disulfide (HfS$_2$) is investigated as a function of temperature (5 K $-$ 350 K) with polarization resolution and excitation of several laser energies. An unexpected temperature dependence of the energies of the main Raman-active (A$_{\textrm{1g}}$ and E$_{\textrm{g}}$) modes with the temperature-induced blueshift in the low-temperature limit is observed. The low-temperature quenching of a mode $\omega_1$ (134 cm$^{-1}$) and the emergence of a new mode at approx. 184 cm$^{-1}$, labeled Z, is reported. The optical anisotropy of the RS in HfS$_2$ is also reported, which is highly susceptible to the excitation energy. The apparent quenching of the A$_{\textrm{1g}}$ mode at $T$=5 K and of the E$_{\textrm{g}}$ mode at $T$=300 K in the RS spectrum excited with 3.06~eV excitation is also observed. We discuss the results in the context of possible resonant character of light-phonon interactions. Analyzed is also a possible effect of the iodine molecules intercalated in the van der Waals gaps between neighboring HfS$_2$ layers, which inevitably result from the growth procedure.

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Igor Antoniazzi, Natalia Zawadzka, Magdalena Grzeszczyk, Tomasz Woźniak, Jordi Ibáñez, Zahir Muhammad, Weisheng Zhao, Maciej R. Molas, Adam Babiński. 2022-12-12. The effect of temperature and excitation energy on Raman scattering in bulk HfS$_2$. https://doi.org/10.1088/1361-648x/acce18

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