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arXiv · 2212.05230

Properties of donor qubits in ZnO formed by indium ion implantation

Xingyi Wang·Christian Zimmermann·Michael Titze·Vasileios Niaouris·Ethan R. Hansen·Samuel H. D'Ambrosia·Lasse Vines·Edward S. Bielejec·Kai-Mei C. Fu
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Abstract

Shallow neutral donors (D$^{0}$) in ZnO have emerged as a promising candidate for solid-state spin qubits. Here, we report on the formation of D$^{0}$ in ZnO via implantation of In and subsequent annealing. The implanted In donors exhibit optical and spin properties on par with $\textit{in situ}$ doped donors. The inhomogeneous linewidth of the donor-bound exciton transition is less than 10 GHz, comparable to the optical linewidth of $\textit{in situ}$ In. Longitudinal spin relaxation times ($T_1$) exceed reported values for $\textit{in situ}$ Ga donors, indicating that residual In implantation damage does not degrade $T_1$. Two laser Raman spectroscopy on the donor spin reveals the hyperfine interaction of the donor electron with the spin-9/2 In nuclei. This work is an important step toward the deterministic formation of In donor qubits in ZnO with optical access to a long-lived nuclear spin memory.

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Xingyi Wang, Christian Zimmermann, Michael Titze, Vasileios Niaouris, Ethan R. Hansen, Samuel H. D'Ambrosia, Lasse Vines, Edward S. Bielejec, Kai-Mei C. Fu. 2023-06-15. Properties of donor qubits in ZnO formed by indium ion implantation. https://doi.org/10.1103/physrevapplied.19.054090

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