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arXiv · 2211.01088

Beta-Ga2O3 MOSFETs with near 50 GHz fMAX and 5.4 MV/cm average breakdown field

Chinmoy Nath Saha·Abhishek Vaidya·A F M Anhar Uddin Bhuiyan·Lingyu Meng·Hongping Zhao·Uttam Singisetti
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Abstract

This letter reports high-performance $\mathrm{\beta} Ga2O3 thin channel MOSFETs with T-gate and degenerately doped source/drain contacts regrown by MOCVD. Gate length scaling (LG= 160-200 nm) leads to a peak drain current (ID,MAX) of 285 mA/mm and peak trans-conductance (gm) of 52 mS/mm at 10 V drain bias with 23.5 Ohm mm on resistance (Ron). A low metal/n+ contact resistance of 0.078 Ohm mm was extracted from TLM measurement. Ron is dominated by interface resistance between channel and regrown layer. A gate-to-drain breakdown voltage of 192 V is measured for LGD = 355 nm resulting in average breakdown field (E_AVG) of 5.4 MV/cm. This E_AVG is the highest reported among all sub-micron gate length lateral FETs. RF measurements on 200 nm Silicon Nitride (Si3N4) passivated device shows a current gain cut off frequency (f_T) of 11 GHz and record power gain cut off frequency (f_MAX) of 48 GHz. The f_T.V_Br product is 2.11 THz.V for 192 V breakdown voltage. The switching figure of merit exceeds that of silicon and is comparable to mature wide-band gap devices.

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Chinmoy Nath Saha, Abhishek Vaidya, A F M Anhar Uddin Bhuiyan, Lingyu Meng, Hongping Zhao, Uttam Singisetti. 2022-11-02. Beta-Ga2O3 MOSFETs with near 50 GHz fMAX and 5.4 MV/cm average breakdown field. https://arxiv.org/abs/2211.01088

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