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arXiv · 2210.14785

110 GHz, 110 mW Hybrid Silicon-Lithium Niobate Mach-Zehnder Modulator

Forrest Valdez·Viphretuo Mere·Xiaoxi Wang·Nicholas Boynton·Thomas A. Friedmann·Shawn Arterburn·Christina Dallo·Andrew T. Pomerene·Andrew L. Starbuck·Douglas C. Trotter·Anthony L. Lentine·Shayan Mookherjea
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Abstract

High bandwidth, low voltage electro-optic modulators with high optical power handling capability are important for improving the performance of analog optical communications and RF photonic links. Here we designed and fabricated a thin-film lithium niobate (LN) Mach-Zehnder modulator (MZM) which can handle high optical power of 110 mW, while having 3-dB bandwidth greater than 110 GHz at 1550 nm. The design does not require etching of thin-film LN, and uses hybrid optical modes formed by bonding LN to planarized silicon photonic waveguide circuits. A high optical power handling capability in the MZM was achieved by carefully tapering the underlying Si waveguide to reduce the impact of optically-generated carriers, while retaining a high modulation efficiency. The MZM has a $V_\pi L$ product of 3.1 V$.$cm and an on-chip optical insertion loss of 1.8 dB.

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Forrest Valdez, Viphretuo Mere, Xiaoxi Wang, Nicholas Boynton, Thomas A. Friedmann, Shawn Arterburn, Christina Dallo, Andrew T. Pomerene, Andrew L. Starbuck, Douglas C. Trotter, Anthony L. Lentine, Shayan Mookherjea. 2022-10-26. 110 GHz, 110 mW Hybrid Silicon-Lithium Niobate Mach-Zehnder Modulator. https://doi.org/10.1038/s41598-022-23403-6

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